Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals

Abstract

Here, we propose a halogen-free vapor phase epitaxy (HF-VPE) technique to grow bulk GaN single crystals. This technique employs the simplest reaction for GaN synthesis (reaction of Ga vapor with NH3) and can potentially achieve a high growth rate, a prolonged growth duration, a high crystal quality, and a low cost. The analyses of thick HF-VPE-GaN layers grown under optimized growth conditions revealed that high-quality crystals, both in terms of dislocation density and impurity concentration, are obtained at high growth rates of over 100 µm/h.

Self-Assembled Single-Crystalline GaN Having a Bimodal Meso/Macropore Structure To Enhance Photoabsorption and Photocatalytic Reactions

“…BiPS-GaN was fabricated using a halogen-free vapor phase epitaxy (HF-VPE) method. − The details of the growth configuration and conditions are summarized in Supporting Information. , A 1.3 μm-thick GaN layer grown on a sapphire substrate (the MO template) via MOCVD was used as the seed crystal. The susceptor temperature during the HF-VPE GaN growth was 1353 K, whereas the Ga crucible was at 1483 K. The porous structure was generated by B segregation during the HF-VPE growth process, − and B was supplied from crucibles made of pyrolytic BN.…”

“…BiPS-GaN was fabricated using a halogen-free vapor phase epitaxy (HF-VPE) method. − The details of the growth configuration and conditions are summarized in Supporting Information. , A 1.3 μm-thick GaN layer grown on a sapphire substrate (the MO template) via MOCVD was used as the seed crystal. The susceptor temperature during the HF-VPE GaN growth was 1353 K, whereas the Ga crucible was at 1483 K. The porous structure was generated by B segregation during the HF-VPE growth process, − and B was supplied from crucibles made of pyrolytic BN. The surface morphology and crystal quality of BiPS-GaN were assessed by scanning electron microscopy (SEM) observation and X-ray diffraction (XRD) analysis, whereas the identities and concentrations of B and Si impurities were determined by secondary ion mass spectrometry (SIMS).…”

Self-assembled single-crystal bimodal porous GaN exhibiting a petal effect: application as a sensing platform and substrate for optical devices

“…The porous GaN samples were fabricated through HF-VPE 22,25–30 on MOCVD GaN on sapphire substrate (MO template) (ESI†). 22,25–30 The bimodal meso/macro porous structure was a self-assembled structure generated by the anti-surfactant effect of B during GaN growth.…”

“…22,26 Details regarding the growth conguration and conditions have been reported elsewhere. 22,26,28 The surface morphology and crystal quality of porous GaN were assessed by SEM and X-ray diffraction analysis, whereas the identication and concentration determination of B, C, O, and Si impurities were performed by SIMS.…”

“…The porous GaN samples were fabricated through HF-VPE 22,[25][26][27][28][29][30] on MOCVD GaN on sapphire substrate (MO template) (ESI †). 22,[25][26][27][28][29][30] The bimodal meso/macro porous structure was a self-assembled structure generated by the anti-surfactant effect of B during GaN growth. 22,26 Details regarding the growth conguration and conditions have been reported elsewhere.…”