Hallgeneratoren mit kleinem linearisierungsfehler

Haeusler, J.; Lippmann, H.

doi:10.1016/0038-1101(68)90149-4

Cited by 55 publications

(8 citation statements)

References 11 publications

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“…8) results in a geometrical error in measuring the Hall mobility of less than 1% using these devices. 44,45 The results as a function of QW width are plotted in Fig. 9.…”

Section: Electrical Characterizationmentioning

confidence: 99%

The thermoelectric properties of Ge/SiGe modulation doped superlattices

Samarelli¹,

Llin²,

Cecchi³

et al. 2013

Journal of Applied Physics

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The thermoelectric and physical properties of superlattices consisting of modulation doped Ge quantum wells inside Si 1Ày Ge y barriers are presented, which demonstrate enhancements in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si 1Ày Ge y , and Si/Ge superlattice materials. Mobility spectrum analysis along with low temperature measurements indicate that the high power factors are dominated by the high electrical conductivity from the modulation doping. Comparison of the results with modelling using the Boltzmann transport equation with scattering parameters obtained from Monte Carlo techniques indicates that a high threading dislocation density is also limiting the performance. The analysis suggests routes to higher thermoelectric performance at room temperature from Si-based materials that can be fabricated using micro-and nano-fabrication techniques. V C 2013 AIP Publishing LLC.

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“…8) results in a geometrical error in measuring the Hall mobility of less than 1% using these devices. 44,45 The results as a function of QW width are plotted in Fig. 9.…”

Section: Electrical Characterizationmentioning

confidence: 99%

The thermoelectric properties of Ge/SiGe modulation doped superlattices

Samarelli¹,

Llin²,

Cecchi³

et al. 2013

Journal of Applied Physics

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“…12) and for the Hall bar configuration the error is around 12.7%. 13 As discussed in our previous paper, 9 semiconductor phonon scattering and coulomb scattering from interfacial charged defects are two dominant scattering processes, which determine the channel mobility for such quantum-well structures. In this work, a model, which includes the above two scattering mechanisms, was developed to calculate the channel mobility.…”

Section: Methodsmentioning

confidence: 87%

High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

Cheng²,

Bulsara

et al. 2012

Journal of Applied Physics

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In this paper, we demonstrate high electron mobility In 0.53 Ga 0.47 As quantum-well metal oxide semiconductor field effect transistor (MOSFET) structures. The Al 2 O 3 (gate dielectric)/ In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As (barrier)/In 0.53 Ga 0.47 As (channel) structures were fabricated, and the mobility was obtained by Hall measurements. The structures with in-situ chemical vapor deposition (CVD) Al 2 O 3 displayed higher mobility than identical structures fabricated with in situ atomic layer deposition Al 2 O 3 , which indicates that CVD process resulted in a lower Al 2 O 3 / In 0.53 Ga 0.47 As interfacial defect density. A gate bias was applied to the structure with CVD Al 2 O 3 , and a peak mobility of 9243 cm 2 /V s at a carrier density of 2.7 Â 10 12 cm À2 was demonstrated for the structure with a 4 nm In 0.53 Ga 0.47 As-In 0.52 Al 0.48 As barrier. A model based on internal phonon scattering and interfacial defect coulomb scattering was developed to explain the experimental data and predict the mobility of In 0.53 Ga 0.47 As MOSFET structures. V

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“…Various authors [25], [16], [17], [23], [24], [12] investigated the electrical characteristics of Hall plates. These papers adopt the method of conformal maps devised by Wick [25] for simply connected Hall plates.…”

Section: ) With Discontinuous Functions A(t) B(t) and C(t)mentioning

confidence: 99%

Hilbert problem for a multiply connected circular domain and the analysis of the Hall effect in a plate

Antipov

Silvestrov

2010

Quart. Appl. Math.

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Abstract.In this paper we analyze the Hilbert boundary-value problem of the theory of analytic functions for an (N + 1)-connected circular domain. An exact series-form solution has already been derived for the case of continuous coefficients. Motivated by the study of the Hall effect in a multiply connected plate we extend these results by examining the case of discontinuous coefficients. The Hilbert problem maps into the Riemann-Hilbert problem for symmetric piece-wise meromorphic functions invariant with respect to a symmetric Schottky group. The solution to this problem is derived in terms of two analogues of the Cauchy kernel, quasiautomorphic and quasimultiplicative kernels. The former kernel is known for any symmetric Schottky group. We prove the existence theorem for the second (quasimultiplicative) kernel for any Schottky group (its series representation is known for the first class groups only). We also show that the use of an automorphic kernel requires the solution to the associated real analogue of the Jacobi inversion problem, which can be bypassed if we employ the quasiautomorphic and quasimultiplicative kernels. We apply this theory to a model steady-state problem on the motion of charged electrons in a plate with N + 1 circular holes with electrodes and dielectrics on the walls when the conductor is placed at a right angle to the applied magnetic field.

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Hallgeneratoren mit kleinem linearisierungsfehler

Cited by 55 publications

References 11 publications

The thermoelectric properties of Ge/SiGe modulation doped superlattices

The thermoelectric properties of Ge/SiGe modulation doped superlattices

High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures

Hilbert problem for a multiply connected circular domain and the analysis of the Hall effect in a plate

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