Hall Study of Silicon Layers Doped with Phosphorus and Boron by Ion Implantation

Abstract

The effective values (i.e. values calculated supposing compensation to be absent) of the ionization energies Ea, d of boron and phosphorus introduced into silicon by ion implantation are determined using Hall measurements. At annealing temperatures ≦ 500 °C, Ed for phosphorus exceeds the “normal” values associated with the presence of compensation by acceptor levels of radiation defects. Under the same conditions the compensation degree is higher for specimens cut out perpendicularly to the [110] axis in comparison with specimens of [111] orientation. For boron in p‐type silicon an increase is found of the effective ionization energy (in comparison with the usual one); Ea first grows with dose (up to 2 × 1014 ions/cm2) and then decreases. For n‐type silicon irradiated with boron, an effective deepening of the level is observed at small doses only and is explained as being due to compensation. An explanation of the mentioned regularities is suggested.

Electrically active sodium-related defect centres in silicon

“…Zastavnyi et al [13] reported the observation of a shallow donor level at E C − 0.032 eV after ion implantation of Na from Hall effect measurements on n-type float zone (FZ) Si. The same level was reported by Zorin et al [14] after investigation with the same technique. This donor level was further examined in [5] and [15].…”

Étude De La Guérison Du Silicium Implanté Au Bore a Haute Énergie Par Mesures d'EFFET Hall en Fonction De La Température

“…5) I'existence, aprbs recuit a 300 OC, d'une Cnergie d'ionisation de 0,068 eV, valeur notablement supCrieure a celle couramment admise pour le bore dans le silicium (0,045 eV). Ce phCnombne peut btre dfi aux contraintes que les trbs nombreux defauts existants peuvent crter dans le rtseau [15], [16].…”