Hall-mobility anisotropy in GaSe

Augelli, V.; Manfredotti, C.; Murri, R.; Vasanelli, L.

doi:10.1103/physrevb.17.3221

Cited by 70 publications

(43 citation statements)

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“…Typical sample dimensions were 8 Â 3 Â 0X3 mm 3 . The ratio of length to width of the samples was about three, and no correction was made for the shortening effect of current electrodes [9]. The temperature dependence of the peak energies of the (A) and (B) emission bands is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Impurity Levels in p-Type Layered Semiconductor InSe Doped with Hg

Shigetomi

Ikari

Nakashima

1998

phys. stat. sol. (b)

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Photoluminescence (PL) and Hall effect measurements have been made on Hg-doped p-type InSe. A broad emission band at 1.237 eV (77 K) is mainly observed on the PL spectra of samples doped with Hg and, in the range 0.02 to 0.1 at%, the PL intensity increases with increasing Hg concentration. From the temperature dependences of the PL intensity and peak energy position, we show that the 1.237 eV emission band is due to the transition between a shallow donor level and a deep acceptor level, at 0.07 eV above the valence band. The dominant acceptor level in the carrier transport measurements shows the same energy position as the radiative recombination center.

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Section: Methodsmentioning

confidence: 99%

Impurity Levels in p-Type Layered Semiconductor InSe Doped with Hg

Shigetomi

Ikari

Nakashima

1998

phys. stat. sol. (b)

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“…A single layer of GaSe is composed of covalently bonded Se−Ga−Ga−Se atoms, with a lattice constant of 0.374 nm and D 3h symmetry2930. Bulk GaSe shows many interesting electrical and optical properties, e.g., anisotropic Hall-mobility31, electron-hole liquid behavior32, and up-conversion luminescence33, and has been widely used in the fields of optoelectronics, nonlinear optics, and terahertz radiation343536. Recently, both theoretical and experimental work have revealed many new properties as bulk GaSe has been thinned systematically to 2D crystals.…”

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confidence: 99%

Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

Lin

Puretzky

et al. 2014

Sci Rep

245

253

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Compared with their bulk counterparts, atomically thin two-dimensional (2D) crystals exhibit new physical properties, and have the potential to enable next-generation electronic and optoelectronic devices. However, controlled synthesis of large uniform monolayer and multi-layer 2D crystals is still challenging. Here, we report the controlled synthesis of 2D GaSe crystals on SiO2/Si substrates using a vapor phase deposition method. For the first time, uniform, large (up to ~60 μm in lateral size), single-crystalline, triangular monolayer GaSe crystals were obtained and their structure and orientation were characterized from atomic scale to micrometer scale. The size, density, shape, thickness, and uniformity of the 2D GaSe crystals were shown to be controllable by growth duration, growth region, growth temperature, and argon carrier gas flow rate. The theoretical modeling of the electronic structure and Raman spectroscopy demonstrate a direct-to-indirect bandgap transition and progressive confinement-induced bandgap shifts for 2D GaSe crystals. The 2D GaSe crystals show p-type semiconductor characteristics and high photoresponsivity (~1.7 A/W under white light illumination) comparable to exfoliated GaSe nanosheets. These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.

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“…We used the usual three-dimensional expression for the density of states of the valence band which is N v = 1.70 10 15 T 3/ 2 cm 3 . The hole e ective mass ratio of 0.5 (Augelli et al 1978) and the degeneracy factor for the acceptor level of g = 2 were used in these calculations. The ® tting of the experimental data was made using N d , N ad , N as , E ad and E as as parameters.…”

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confidence: 99%