Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

Shigetomi, S.; Ikari, Tetsuo

doi:10.1080/095008399176959

Cited by 9 publications

(6 citation statements)

References 1 publication

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“…In view of possible optoelectronic device applications in the visible region [6], a great deal of attention has been devoted to the study of the optical and electrical properties of binary layered gallium chalcogenides [7][8][9][10]. Long-wavelength optical phonons in GaS x Se 1Ϫx layered mixed crystals were studied by IR reflection and Raman scattering experiments [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Aydınlı

Gasanly

Goksen

2001

Materials Research Bulletin

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Photoluminescence (PL) spectra of GaS 0.5 Se 0.5 layered single crystals have been studied in the wavelength range of 565-860 nm and in the temperature range of 15-170 K. Two PL bands centered at 585 nm (2.120 eV) and 640 nm (1.938 eV) were observed at T ϭ 15 K. Variations of both bands were studied as a function of excitation laser intensity in the range from 10 Ϫ3 to 15.9 W cm Ϫ2 . These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located at 0.029 and 0.040 eV below the bottom of the conduction band to deep acceptor levels located 0.185 and 0.356 eV above the top of the valence band are suggested to be responsible for the observed A-and B-bands in the PL spectra, respectively. A simple energy level diagram explaining the recombination process is proposed.

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Section: Introductionmentioning

confidence: 99%

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Aydınlı

Gasanly

Goksen

2001

Materials Research Bulletin

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“…Sample dimensions and thickness were 5×5 mm 2 and 0.3 mm, respectively. Then, the sample surface parallel to c-axis was bombarded by Ge-ion beam of 100 keV and doses of 6x10 15 ions/cm 2 at room temperature. In order to see the effect of annealing and remove the damage induced during the implantation, annealing process was performed at 300, 500, and 700°C for as-grown samples.…”

Section: Methodsmentioning

confidence: 99%

“…There are markedly many studies carried out to observe the influence of chemical doping in GaSe crystals with different elements, such as Cl [11], Sn [12][13], Cu [14], Li [15], Ag [16], and Zn [17]. Although chemical doping is the most commonly used method, it has some drawbacks since the dopant is added before the growth process.…”

Section: Introductionmentioning

confidence: 99%

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Karaağaç¹,

Parlak²,

Karabulut³

et al. 2006

Cryst. Res. Technol.

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Structural, optical and electrical properties of Ge implanted GaSe single crystal have been studied by means of X‐Ray Diffraction (XRD), temperature dependent conductivity and photoconductivity (PC) measurements for different annealing temperatures. It was observed that upon implanting GaSe with Ge and applying annealing process, the resistivity is reduced from 2.1 × 109 to 6.5 × 105 Ω‐cm. From the temperature dependent conductivities, the activation energies have been found to be 4, 34, and 314 meV for as‐grown, 36 and 472 meV for as‐implanted and 39 and 647 meV for implanted and annealed GaSe single crystals at 500°C. Calculated activation energies from the conductivity measurements indicated that the transport mechanisms are dominated by thermal excitation at different temperature intervals in the implanted and unimplanted samples. By measuring photoconductivity (PC) measurement as a function of temperature and illumination intensity, the relation between photocurrent (IPC) and illumination intensity (Φ) was studied and it was observed that the relation obeys the power law, IPC αΦn with n between 1 and 2, which is indication of behaving as a supralinear character and existing continuous distribution of localized states in the band gap. As a result of transmission measurements, it was observed that there is almost no considerable change in optical band gap of samples with increasing annealing temperatures for as‐grown GaSe; however, a slight shift of optical band gap toward higher energies for Ge‐implanted sample was observed with increasing annealing temperatures. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…1) The electric and optical properties of GaSe doped with elements of groups I, II, IV, and VII have been reported by many researchers. [2][3][4][5][6] Room-temperature hole concentrations of the order of 10 15 -10 16 cm À3 have been demonstrated by doping Cd, Zn, Cu, and Ag.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of GaSe Doped with Er

Hsu

Chang

Hsieh

2003

Jpn. J. Appl. Phys.

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The Er-doped GaSe crystal has been investigated by using temperature dependent photoluminescence (TDPL), a Fouriertransform infrared spectrometer (FTIR), and Hall effect measurements. The Er-doped GaSe appears to be a p-type semiconductor. The impurity level at $2:064 eV is observed and located at $64 meV above the valence band in both the asgrown and the annealed Er doped GaSe crystal. Additionally, the infrared luminescence and transmission spectra which have arisen from the intracenter transitions 4I 9=2 ! 4I 15=2 , 4I 11=2 ! 4I 15=2 , and 4I 13=2 ! 4I 15=2 of erbium ions have been observed at $0:81, 0.99, and 1.54 mm, respectively. The annealing process under excess Se atmosphere at 600 C for 72 h can enhance the crystal to have more active erbium ions.

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Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

Cited by 9 publications

References 1 publication

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Low-temperature photoluminescence study of GaS0.5Se0.5 layered crystals

Structural, electrical and optical properties of Ge implanted GaSe single crystals grown by Bridgman technique

Photoluminescence Study of GaSe Doped with Er

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