Hall measurements of bilayer structures

Jain, Sushil; Griffin, P.B.; Plummer, J.D.

doi:10.1063/1.1529093

Cited by 10 publications

(3 citation statements)

References 3 publications

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“…This result is consistent with previous work, 19 which showed no discernable activation beyond the background p-type doping of the sample presumably due to junction leakage. 20 Other reports of surface inversion layers of InAs have resulted in measurement complications for InAs heterostructures as well. 9 The reported complications of measuring electrical activation of implanted dopants into InAs via Hall effect may explain the lack of previous reports of dopant activation despite n-type implants being performed a)…”

Section: Introductionmentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si þ implants into lightly doped (001) p-type bulk InAs performed at 100 C as a function of annealing time and temperature was measured via Raman scattering. Peak shift of the L þ coupled phonon-plasmon mode after annealing at 700 C shows that active n-type doping levels %5 Â 10 19 cm À3 are possible for ion implanted Si in InAs. These values are comparable to the highest reported active carrier concentrations of 8-12 Â 10 19 cm À3 for growth-doped n-InAs. Raman scattering is shown to be a viable, non-contact technique to measure active carrier concentration in instances where contact-based methods such as Hall effect produce erroneous measurements or junction leakage prevents the measurement of shallow n þ layers, which cannot be effectively isolated from the bulk. V C 2016 AIP Publishing LLC.

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Section: Introductionmentioning

confidence: 99%

Activation of Si implants into InAs characterized by Raman scattering

Lind

Martin

Sorg

et al. 2016

Journal of Applied Physics

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“…The error bars for the Flash SPE occur due to uncertainty in the low intermediate temperature. The Hall measurements were carried out at 250 K to eliminate leakage to the substrate (19).…”

Section: Activation During Millisecond Annealingmentioning

confidence: 99%

“…Table 1 shows the preamorphizing implant energies, the resulting a-Si thickness and the corresponding time for which each sample was annealed at the different temperatures. The samples were then characterized using low temperature Hall measurements (19).…”

Section: Activation Mechanisms During Spementioning

confidence: 99%

Novel Methods For Ultrashallow Low Resistance Junction Formation

Jain¹,

Griffin

Plummer

2006

ECS Trans.

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Source drain parasitic resistance is expected to become one of the major roadblocks to the continued improvements of device performance. According to the ITRS roadmap, the source drain parasitic resistance is expected to become as much as 26% of the intrinsic device resistance by the 45 nm technology node. This has driven the development of annealing tools where the silicon surface is heated and then cooled down on the time scale of milliseconds. While these tools provide improved activation, the boron activation here is limited by the solid solubility. It has been observed that the boron activation obtained after solid phase epitaxial regrowth increases with the temperature at which the regrowth is carried out. By carrying out the regrowth at a high temperature it is possible to obtain active concentrations as high as 6.5×1020/cm3 - well above the solubility limits of B in silicon. Due to the low thermal budget, the profiles undergo very little diffusion, resulting in extremely abrupt junctions that are limited only by the implanted profile.

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