Hall effect of epitaxial double-perovskite Sr2FeMoO6 thin films

Abstract

We prepared high epitaxial thin films of the compound Sr2FeMoO6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room temperature in magnetic fields up to 8 T. An electronlike ordinary Hall effect and a holelike anomalous Hall contribution are observed. Both coefficients have reversed sign compared to the colossal magnetoresistive manganites. We found at 300 K an ordinary Hall coefficent of −1.87 × 10 −10 m 3 /As, corresponding to a nominal charge carrier density of four electrons per formula unit. At low temperature only a small negative magnetoresistance is observed which vanishes at higher temperatures. The temperature coefficient of the resistivity is negative over the whole temperature range. A Kondo like behavior is observed below 30 K while above 100 K variable range hopping like transport occurs.

What Can Electric Noise Spectroscopy Tell Us on the Physics of Perovskites?

“…Equation (1) has been used to fit the set of -curves, obtained at different temperatures, taking , , and ( ) as free fitting coefficients. As a result, a good agreement over the Semiconducting-like R(T) curves have been measured in polycrystalline samples (Figure 3a), obtaining results very similar to those already reported in literature for granular SFMO compounds (Figure 3b) [96]. In this respect, the fluctuation-induced tunneling (FIT) model has also been used to explain the electrical transport properties [56,97].…”

“…The polycrystalline nature of the samples strongly influences the magnetic behavior, characterized by a ferromagnetic-paramagnetic transition with a Curie temperature ≈ 330 K (see the -curves in Figure 2c). Semiconducting-like ( ) curves have been measured in polycrystalline samples (Figure 3a), obtaining results very similar to those already reported in literature for granular SFMO compounds (Figure 3b) [96]. In this respect, the fluctuation-induced tunneling (FIT) model has also been used to explain the electrical transport properties [56,97].…”

The effects of oxygen pressure on disordering and magneto-transport properties of Ba2FeMoO6 thin films grown via pulsed laser deposition

“…This anomalous Hall behavior is also seen in Sr 2 FeMoO 6 systems, where the origin of this anomalous Hall effect is believed to be induced by skew scattering. 22 …”

Thin films of double perovskite Sr2FeMoO6: Growth, optimization, and study of the physical and magnetotransport properties of films grown on single-crystalline and polycrystalline SrTiO3 substrates

“…Asano et al 16 observed that the films deposited at low temperatures had semiconductorlike behavior of resistivity, whereas those deposited at higher temperatures ͑with a very thin buffer layer deposited at lower temperature͒ were metallic. Westerburg et al 18 observed a small negative MR for their films at very large field (ϳ3% at 300 K and 8 T͒. Manako et al 15 reported that the SFMO films could only be obtained in a narrow range of deposition temperature and oxygen partial pressure.…”

“…Therefore, studies involving SFMO thin films are needed. However, due to the stringent conditions and a very narrow space of deposition parameters encountered for high-quality film growth of these double perovskites, there are only a few reports on thin films, [15][16][17][18][19] as compared to a very large number of studies on polycrystalline bulk material. Asano et al 16 observed that the films deposited at low temperatures had semiconductorlike behavior of resistivity, whereas those deposited at higher temperatures ͑with a very thin buffer layer deposited at lower temperature͒ were metallic.…”