Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

Abstract

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm−3 (lightly doped) to 3.8 × 1019 cm−3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm−2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm−3 and the donor concentration of 3.2 × 1016 cm−3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V−1 s−1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN

“…Figure 3 shows the electron and hole mobilities in the basal [1000] plane of GaN, computed both using Wannier interpolation plus the Fröhlich interaction and with our improved scheme including the quadrupole term. Experimental mobility measurements [50][51][52][53][54][55][56] are also given for comparison. Compared to calculations that include only the dipole Fröhlich interaction, including the quadrupole term removes the artificial overestimation of acoustic phonon scattering, thus increasing the computed mobility and correcting its temperature dependence, especially at lower temperatures, where acoustic scattering is dominant.…”

“…[50][51][52][53] for electrons and Refs. [54][55][56] for holes are shown for comparison. decreases at higher temperatures because the two methods differ primarily for small-q acoustic scattering, which becomes progressively less important at higher temperatures.…”

InxGa1-xN/GaN double heterojunction solar cell optimization for high temperature operation

“…GaN InN InxGa1-xN Eg(eV) à 0K 3.507 [16] 0.690 [17] (eV/K) 0.909×10 -3 [16] 0.414 ×10 -3 [17]  (K) 830 [16] 454 [17] bowing parameter b 1.65 [19] μ min,e (cm 2 /V.s) 80-100 [22] 485 [24] μ max,e (cm 2 /V.s) 1400 [22] 10927 [24] N ref e (×10 17 cm -3 ) 0.8-1.6 [22] 1.0 [24] e 0.69-0.71 [22] 0.6514 [24] e -2.85 [22] -2.1948 [24] e -0.2 [22] 0.3997 [24] e 1.3 [22] 1.3383 [24] e 0.31 [22] -0.5984 [24] μ min,h (cm 2 /V.s) 0 [25] 15 [26] μ max,h (cm 2 /V.s) 31 [25] 220 [26] N ref h (×10 18 cm -3…”

“…) 18 [25] 0.8 [26] h 1.5 [25] 1,25 [26] h 0 0 h -2.5 [25] -2,5 [26] h 0 0 h 0 0 µ µGaN(T,N) µInN(T,N) Linear interpolation C 3.525 [27] 0.705 3.525-18.29x+40.22x 2 -37.52x 3 +12.77x 4 [28] D -0.6651 [27] 0,4909 -0.6651+3.616x-2.46x 2 [28] a 10.1±0.3 [30] 9.4±0.5 [30] Linear interpolation b 2.67±0.08 [30] 5.0±0.2 [30] Linear interpolation B (cm 3 /s) ~5×10 -9 [31] ~5×10 -9 constant with x n (cm 2 ) 5×10 -13 [33] p (cm 2 ) 7×10 -14 [34] m*n 0.2 [27] 0.05 [27] Linear interpolation m*p 1.25 [27] 0.42 [35] Linear interpolation r 8.9 [27] 15.3 [36] Linear interpolation Ed (meV) 12-17 [39] [Si] gd 2 [39] [Si] Ea (meV)…”

Analysis of simultaneous occurrence of shallow surface Fermi level pinning and deep depletion in MOS diode with Mg-ion-implanted GaN before activation annealing

“…However, for GaN, the formation of a p-type region by ion implantation has been difficult. Although Mg ion implantation is the most promising method for achieving p-type conduction, the activation ratio is usually low even if a large activation energy, such as larger than 200 meV [9][10][11] , is considered. Recently, however, successful achievements of a p-type region in GaN by Mg ion implantation have been reported [12][13][14][15][16][17][18][19][20] .…”