Hall Effect in Oriented Single Crystals of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Germanium

Bullis, W Murray; Krag, W. E.

doi:10.1103/physrev.101.580

Cited by 29 publications

(8 citation statements)

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“…This effect has been observed in the mixed state of strongly inhomogeneous type-II superconductors [38,39,40] as well as in inhomogeneous semiconductors [41,42].…”

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confidence: 91%

Integer quantum Hall effect in graphite

Kempa

Esquinazi

Kopelevich

2006

Solid State Communications

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We present Hall effect measurements on highly oriented pyrolytic graphite that indicate the occurrence of the integer quantum-Hall-effect. The evidence is given by the observation of regular plateau-like structures in the field dependence of the transverse conductivity obtained in van der Pauw configuration. Measurements with the Corbino-disk configuration support this result and indicate that the quasi-linear and non-saturating longitudinal magnetoresistance in graphite is governed by the Hall effect in agreement with a recent theoretical model for disordered semiconductors. Recent experimental [1,2,3,4,5,6] and theoretical [7,8,9] work demonstrates the occurrence of correlated phenomena in the electron system of graphite, indicating that the classical view of the physics of its magnetotransport properties is not adequate. Besides, the quantum Hall effect (QHE) [1] as well as evidence for Dirac fermions (massless particles due to the linear dispersion relation) [5] have been reported for bulk samples of highly oriented pyrolytic graphite of high quality. Recently published results obtained on bulk graphite [10,11], a few layers thick graphite [12], and in graphene (single graphite layer) [13,14] have confirmed both observations and showed that in graphene the QHE is anomalous in that the contribution of the Dirac fermions makes the plateaus to occur at half-integer filling factors. Certainly, the understanding of the electronic properties of graphite is necessary for the development of advanced technology of the graphite-related nanomaterials.

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“…This effect has been observed in the mixed state of strongly inhomogeneous type-II superconductors [38,39,40] as well as in inhomogeneous semiconductors [41,42].…”

mentioning

confidence: 91%

Integer quantum Hall effect in graphite

Kempa

Esquinazi

Kopelevich

2006

Solid State Communications

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“…In order to obtain the Hall factor ␥, we have to know the Hall coefficient at the magnetic field B→ϱ, R H (B→ϱ), which can be obtained by extrapolating the plot of R H versus 1/B 2 linearly to B→ϱ. 3 The obtained value of R H ͑B→ϱ͒ from Fig. 1 …”

Section: Effects Of Electron Mass Anisotropy On Hall Factors In 6h-sicmentioning

confidence: 99%

“…͑1͒, we have ␥(B)/␥(B→ϱ)ϭR H (B)/R H ͑B→ϱ͒. By noting that ␥͑B→ϱ͒ϭ1, 3 we obtain the magnetic field dependence of the Hall factor ␥͑B͒ as,…”

Section: Effects Of Electron Mass Anisotropy On Hall Factors In 6h-sicmentioning

confidence: 99%

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Effects of electron mass anisotropy on Hall factors in 6H-SiC

Chen

Lin

Jiang

1996

Applied Physics Letters

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Articles you may be interested inDetermination of the in-plane anisotropy of the electron effective mass tensor in 6H-SiC Appl. Phys. Lett. 82, 598 (2003); 10.1063/1.1539545 Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in ntype 4H-and 6H-SiC Theory of the anisotropy of the electron Hall mobility in n-type 4H-and 6H-SiC Effects of barrier height fluctuations and electron tunneling on the reverse characteristics of 6H-SiC Schottky contacts

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“…For instance, if the FM magnetization is oriented by an in-plane magnetic field at an angle with the charge current, anisotropic magnetoresistance results. This gives rise to a planar Hall effect [10][11][12] which is difficult to distinguish from a signal due to the spin-momentum coupling in the TI 13 . The situation would not be different if the current flows perpendicular to the interface between TI and the ferromagnet, since the strong spin orbit interaction of the TI may induce an anisotropic tunneling magnetoresistance signal, as has been observed in devices consisting of a tunneling barrier between a ferromagnet and a non-magnetic layer.…”

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confidence: 99%

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

Ojeda‐Aristizabal

Fuhrer

Butch

et al. 2012

Applied Physics Letters

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A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi 2 Se 3 on n-type silicon with independent electrical contacts to silicon and Bi 2 Se 3 . Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi 2 Se 3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi 2 Se 3 into Si.The most remarkable feature of the three-dimensional strong topological insulators (TIs) is the existence of a metallic surface state within the bulk bandgap with chiral charge carriers exhibiting perfect spin-momentum coupling. The chiral TI surface state has been proposed as the basis of spintronics and quantum computing devices. 1,2 Although the spin helicity of the TI surface has been experimentally measured by spin-angle resolved photoemission spectroscopy (spin-ARPES) 3-5 , no electrical transport experiment has yet shown clear evidence of it for several reasons. Since spin and momentum are perfectly coupled, non local measurement of a spin current in the absence of a charge current 6,7 is precluded. Perhaps even more importantly, spin precession induced by a weak perpendicular magnetic field is also eliminated by momentum scattering in the diffusive regime. This is particularly problematic since evidence of spin precession and dephasing are used to unambiguously identify spin transport in both inorganic semiconductors 8 and metals 9 .Direct measurement of the spin Hall effect by injection of spin from a ferromagnetic (FM) contact is also problematic since the desired signal will be difficult to distinguish from the ordinary Hall effect due to stray fields from the nearby FM electrode.More sophisticated measurement geometries are unlikely to solve the problem. For instance, if the FM magnetization is oriented by an in-plane magnetic field at an angle with the charge current, anisotropic magnetoresistance results. This gives rise to a planar Hall effect 10-12 which is difficult to distinguish from a signal due to the spin-momentum coupling in the TI 13 . The situation would not be different if the current flows perpendicular to the interface between TI and the ferromagnet, since the strong spin orbit interaction of the TI may induce an anisotropic tunneling magnetoresistance signal, as has been observed in devices consisting of a tunneling barrier between a ferromagnet and a non-magnetic layer. 14,15 Here, we propose a class of transport experiments a) Condensed Matter and Materials division, Lawrence Livermore National Laboratory, Livermore, CA 94550, USA (present address) to confirm the spin-momentum coupling in TI surface states which circumvents these problems by injecting spin polarized electrons from a long-distance silicon transport channel into the topological ...

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Hall Effect in Oriented Single Crystals ofn-Type Germanium

Cited by 29 publications

References 8 publications

Integer quantum Hall effect in graphite

Integer quantum Hall effect in graphite

Effects of electron mass anisotropy on Hall factors in 6H-SiC

Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

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