Effects of electron mass anisotropy on Hall factors in 6H-SiC

Chen, G. D.; Lin, J. Y.; Jiang, H. X.

doi:10.1063/1.115928

Cited by 13 publications

(5 citation statements)

References 4 publications

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“…At room temperature, ionized impurity scattering is not the dominant scattering mechanism. The electronacoustic phonon and electron-optical phonon scattering with the relationship µ n ∼ T −3/2 will play an important part in n-GaN at high temperature [27]. The high doping of Mg limits the response velocity in the application of the GaN photodetector.…”

Section: Resultsmentioning

confidence: 99%

Minority electron mobility in a p-n GaN photodetector

Guan

Zhang

et al. 2000

Semicond. Sci. Technol.

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Photoconductive transients and responsivity in a GaN p-n UV photodetector under different applied voltages are investigated at room temperature. The electron mobility of minority carriers in the p-GaN epilayer has been measured by a diffusion time-of-flight technique, and was found to be about 0.12 cm 2 V −1 s −1 with the bias between 1 V and 12 V. The difference of the electron mobilities between the minority carriers in p-GaN and the majority carriers in n-GaN is explained by different scattering mechanisms. The neutral impurity and phonon scattering mechanisms dominate the minority electron mobility in p-GaN. The photoconductive responsivity increases nearly linearly at low voltage and saturates at about 10 V, corresponding to a saturation field of approximately 3.7 × 10 4 V cm −1 . The implication of these results for applications of GaN UV detectors is also discussed.

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Section: Resultsmentioning

confidence: 99%

Minority electron mobility in a p-n GaN photodetector

Guan

Zhang

et al. 2000

Semicond. Sci. Technol.

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“…For SiC, the situation looks much more uncertain. For such an important parameter as low-field mobility, many experimental works have been published in the last few years, concerning the temperature and concentration dependences of mobility in different SiC polytypes [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28]. However, it has not been until very recently that the first attempts have been made to analyse the available set of experimental data from a unified standpoint [29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Carrier mobility model for simulation of SiC-based electronic devices

Mnatsakanov¹,

Levinshteǐn²,

Pomortseva³

et al. 2002

Semicond. Sci. Technol.

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Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperature and concentration. The obtained results can be directly used for the computer simulation of SiC-based devices. Different approaches to the analytical approximation of SiC parameters are critically correlated and analysed.

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“…2(a) and 2(b), respectively. Since the Hall scattering factor r H is reported to be approximately unity at RT for 4H-SiC, 19,20) we directly compared the drift mobilities estimated from infrared reflectance measurements and the Hall mobilities obtained from Hall-effect measurements. The error bars shown in the figures represent the accuracy of the fitting analysis, and the accuracy is about AE4% for both the carrier concentration and the mobility, whereas the accuracy of the values derived from Hall-effect measurements is about AE10%.…”

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confidence: 99%

Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

Oishi

Hijikata

Yaguchi

et al. 2006

jjap

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We have simultaneously determined the carrier concentration, mobility, and thickness of 4H–SiC homoepilayers with carrier concentrations of 1017–1018 cm-3 from infrared reflectance measurements with the wave number range of 80–2000 cm-1. A modified classical dielectric function model was employed for the fitting analyses. We have prepared n-type epilayers on p-type and n-type substrates for comparison with the values of the carrier concentration and mobility estimated from infrared reflectance measurements with those obtained from Hall-effect measurements and C–V measurements. Through these comparisons, we have confirmed the validity of the values estimated from infrared reflectance measurements.

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Effects of electron mass anisotropy on Hall factors in 6H-SiC

Cited by 13 publications

References 4 publications

Minority electron mobility in a p-n GaN photodetector

Minority electron mobility in a p-n GaN photodetector

Carrier mobility model for simulation of SiC-based electronic devices

Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy

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