No abstract

No abstract

It is demonstrated that, in addition to the well-known quasineutral modes of carrier transport, i.e., those of quasineutral diffusion and quasineutral drift, a quasineutral mode of diffusion stimulated by quasineutral drift (DSQD) is possible. An equation that describes this mode is derived and the principal specific features of the mode are examined analytically. In particular, an analytical expression for the current-voltage (I-V) characteristic is obtained for the case when just DSQD governs the carrier transport. The analytical results obtained are verified and confirmed by a detailed simulation.

No abstract

Simple analytical approximations are proposed for describing the temperature and concentration dependences of low-field mobility in the main polytypes of silicon carbide (SiC): 6H, 4H and 3C in wide ranges of temperature and concentration. The obtained results can be directly used for the computer simulation of SiC-based devices. Different approaches to the analytical approximation of SiC parameters are critically correlated and analysed.