Hall effect in MnAl films

The Hall Effect in MnSe Films

“…2, curve a is in agreement with the thickness dependence of the Hall coefficient in ferromagnetic films, e.g. MnSb [15], MnAl [16], MnBi [17], and CuNi [18]. The theoretical prediction [S] about n, the density of charge carriers, assuming an infinite potential well, is that the carrier concentration should increase with thickness and consequently R, should decrease with thickness and this is confirmed in the case of MnSe films (Fig.…”

Recent progress in perpendicularly magnetized Mn-based binary alloy films

“…Angadi and Thanigaimani reported the Hall effect of MnAl films evaporated on glass substrates with different compositions and different thicknesses (25-150 nm), and found that the ordinary Hall coefficient R 0 and anomalous Hall coefficient R s are of the same order over the entire thickness range. [77] Both R 0 and R s are positive for thinner layers, and negative for thicker ones. Boeck et al observed rectangular Hall hysteresis loops in Mn 1.5 Al grown on AlAs-GaAs (001) and AHE resistivity in the order of 4-8 µΩ•cm, [72] depending on the width of the Hall bar.…”

“…[65] 3.2. Growth and magnetic properties of Mn x Al epitaxial films Since 1990s, the growth and magnetic properties of L1 0 -MnAl thin have been widely studied on AlAs-buffered GaAs (001), [68,69,[71][72][73][74] GaAs (001), [26,70] Cr-buffered MgO (001), [75,76] and glass [77] by MBE, sputtering, e-beam evaporation, and pulse laser deposition. Despite those progresses, only a few L1 0 -MnAl epitaxial films grown on GaAs (001) and MgO (001) substrates exhibited perpendicular magnetic anisotropy.…”