Recent progress in perpendicularly magnetized Mn-based binary alloy films

Zhu, Lihua; Nie, Shouping; Zhao, Jianhua

doi:10.1088/1674-1056/22/11/118505

Cited by 36 publications

(27 citation statements)

References 74 publications

(253 reference statements)

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“…The good homogeneity and sharp interface of these films are confirmed by the cross-sectional high-resolution transmission electron microscopy images [29]. More details of structures, magnetic and transport properties could be found elsewhere [27][28][29]. The values of f of these films were determined by a Quantum Design SQUID-5 system.…”

mentioning

confidence: 85%

“…On the other hand, L10-MnAl films are ideal for the AHE studies due to their giant perpendicular magnetic anisotropy (~10 6 erg/cc), well-defined perpendicular hysteresis loops, and large values of ρAH (e.g. 2~7.5 μΩ cm in Mn1.5Al films grown on AlAs-buffered GaAs) [28][29][30][31][32]. However, there has been no report about the temperature dependence of ρAH or the scaling of the AHE in MnAl to date.…”

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confidence: 99%

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Anomalous Hall effect inL10−MnAlfilms with controllable orbital two-channel Kondo effect

2016

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Abstract：The anomalous Hall effect (AHE) in strongly disordered magnetic systems has been buried in persistent confusion despite its long history. We report the AHE in perpendicularly magnetized L10-MnAl epitaxial films with variable orbital two-channel Kondo (2CK) effect arising from the strong coupling of conduction electrons and the structural disorders of two-level systems. The AHE is observed to excellently scale with ρAH/f=a0ρxx0+bρxx 2 at high temperatures where phonon scattering prevails. In contrast, significant deviation occurs at low temperatures where the orbital 2CK effect becomes important, suggesting a negative AHE contribution. The deviation of the scaling agrees with the orbital 2CK effect in the breakdown temperatures and deviation magnitudes. The scaling between longitudinal resistivity (ρxx) and anomalous Hall resistivity (ρAH) can provide access to the detailed mechanisms of the AHE. Present theories predict a scaling of ρAH~ρxx n , with n = 2 for side jump and intrinsic contribution [4,5], and n = 1 for skew scattering [6]. The intrinsic contribution is related to the topological Berry curvature of band structure [4], while the extrinsic side jump and skew scattering result from spin-orbit interaction-induced asymmetric impurity scattering of conduction electrons [5,6]. Notably, in contrast to the conventional picture that ρAH scales with the total resistivity irrespective of its sources [3], recent experimental studies have revealed that both ρAH and the scaling relation are qualitatively different for various types of electron scattering. Phonon scattering was found to have no distinguishable contribution to extrinsic part of ρAH in ferromagnetic Fe, Co, Ni, L10-Mn1.5Ga films, Co/Pt multilayers, and paramagnetic Ni34Cu66 films [7][8][9][10][11][12]. When ρxx is dominated by phonon and static defect scattering, the AHE has a scaling of ρAH = a0 ρxx0+bρxx 2 , where ρxx0 is the residual resistivity, a0ρxx0 is the extrinsic contribution from both side jump and skew scattering, and b is the intrinsic anomalous Hall conductivity (AHC). In magnetic materials with relatively low Curie temperature, the temperature (T) induced variation of the magnetization must be taken into account [13]. For the simplest case that ρAH scales proportionally with magnetization (M) which is not the fact in some magnetic systems [14,15], the AHE scaling can be modified into a more general expression explicitly as ρAH/f = a0 ρxx0+bρxx 2 . Here, f = M / M0, where M0 is magnetization at 0 K; the Tindependence of a0 and b is not considered. In the presence of strong disorder effects (dirty metal [1]), the AHE scaling is more complex. In the hopping conduction regime, the AHE was reported to scale as ρAH~ρxx 0.4 [19][20][21]. Therefore, further experimental and theoretical attempts are crucial for better understanding of the AHE, especially in disordered magnetic systems. Key words：AnomalousThe Kondo effect is a striking consequence of conduction electrons coupling with localized spin or "pseudospin" impurities. The on...

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confidence: 85%

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confidence: 99%

Anomalous Hall effect inL10−MnAlfilms with controllable orbital two-channel Kondo effect

2016

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“…1,2 The L1 0 -ordered ferromagnetic Mn x Ga with 0.76≤x≤1.8 is of particular interests for its high magnetic performance. 3 The L1 0 -MnGa was first reported by Tsuboya and Sugihara to appear in the Mn composition ranging from 66 to 68.5 at.%. 4 It is interesting that the L1 0 -phase appears in two individual composition ranges of 65-68 at.% Mn and 58-61 at.%, respectively.…”

Section: Introductionmentioning

confidence: 97%

“…6,7 The growth and characterizations of the L1 0 -MnGa films have been extensively studied since the observation of the square perpendicular hysteresis of Mn x Ga (1.2<x<1.5) films in 1990s. 3,8,9 The L1 0 -MnGa microparticles with size in the range of 10-50 µm had been prepared by high energy ball milling and subsequent annealing. 5 The magnetic properties of the microparticles are comparable to the highest a Authors for correspondence, Electronic mail: pzsi@cjlu.edu.cn (P. Z. Si); cjchoi@kims.re.kr (C. J. Choi) ones reported for ferromagnetic tetragonal MnGa films grown by MBE.…”

Section: Introductionmentioning

confidence: 99%

Structure and magnetic properties of L1-MnGa nanoparticles prepared using direct reactions between Mn nanoparticles and Ga

et al. 2018

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The tetragonal L10-Mn1+xGa (x<0.8) nanoparticles and bcc-Mn23Ga77 nanoparticles with large coercivity were prepared using direct reactions between Mn nanoparticles and Ga at elevated temperatures. The Mn23Ga77 phase was formed at ∼573 K while the L10-structured Mn1+xGa was formed at ∼850 K. After ball-milling, the L10-Mn1+xGa nanoparticles transformed into nano-flakes with enhanced coercivity. The size of the as-prepared Mn23Ga77 nanoparticles is comparable to that of the precursor Mn nanoparticles. An aggregation of the nanoparticles and thus a larger particle size were observed in the L10-Mn1+xGa nanoparticles obtained at 850 K. The size of the L10-Mn1+xGa nano-flakes is reduced to about 200-400 nm with a thickness of ∼20 nm. The coercivity of the Mn23Ga77 nanoparticles and the L10-Mn1+xGa nanoparticles at 300 K reached up to 0.2 T and 0.43 T, respectively. The coercivity of L10-Mn1+xGa ball-milled nano-flakes is 0.59 T at 300 K.

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“…[8,9] Currently, the main spacer materials for magnetoresistance devices are MgO for magnetic tunnel junctions [2,3,8,9] and Cu or Ag for current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices. [4,[10][11][12] However, MgO has relatively large lattice mismatch (more than 5%) with ferromagnetic materials with high spin polarization and/or large PMA, such as half-metallic Co 2 MnSi, [13,14] L1 0 -or D0 22 -Mn-Ga, [15][16][17] and L1 0 -FePt alloys. [18,19] This can result www.advelectronicmat.de devices with Mn-Ga or L1 0 -FePt electrodes for achieving large PMA, as well as with half-metallic Heusler alloy electrodes for improving the ordering structures and achieving high values of spin polarization.…”

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confidence: 99%

Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice‐Matched Magnetic Heterostructures with Enhanced Thermal Stability

Wen

Kubota

Takanashi

2017

Adv Elect Materials

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The engineering of advanced materials for lattice‐matched magnetic heterostructures with remarkable magnetoelectric properties is of particular importance for future spintronic devices. Here, epitaxial CuN films with highly tunable lattice constant and resistivity are fabricated. The lattice constant of the CuN films is controlled from 0.362 to 0.388 nm, and the resistivity is varied over a range of more than two orders of magnitude. Lattice‐matched CuN/Co2Fe0.4Mn0.6Si (CFMS) heterostructures are achieved. A dramatic enhancement of the thermal stability of the heterostructure over that of Cu/CFMS is observed. Furthermore, magnetoresistance nanojunctions are fabricated using lattice‐matched CuN spacers, and an enhancement of the magnetoresistance effect at high annealing temperatures is observed. This work shows that the manipulation of the lattice constant and resistivity of CuN films in lattice‐matched heterostructures can be important for engineering future advanced electronic materials for the development of spintronic devices.

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Recent progress in perpendicularly magnetized Mn-based binary alloy films

Cited by 36 publications

References 74 publications

Anomalous Hall effect inL10−MnAlfilms with controllable orbital two-channel Kondo effect

Anomalous Hall effect inL10−MnAlfilms with controllable orbital two-channel Kondo effect

Structure and magnetic properties of L1-MnGa nanoparticles prepared using direct reactions between Mn nanoparticles and Ga

Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice‐Matched Magnetic Heterostructures with Enhanced Thermal Stability

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