Halide perovskite memtransistor enabled by ion migration

Abstract

We exploit the problem of ion migration in the halide perovskite CH3NH3PbI3 (MAPbI3) by developing a memtransistor (i.e. hybrid memristor and transistor) with the field-effect transistor geometry. Application of an electric field between the drain and the source results in resistive switching from a high resistance state (HRS) to a low resistance state (LRS) due to dynamic redistribution of ions in the MAPbI3 layer. The gate enables continuous tuning of this LRS across several orders of magnitude. The LRS persists after removing the power supply and the memtransistor can be switched back to the HRS by reversing the bias polarity. Excellent state retention is demonstrated for 104 s and a switching ratio (HRS/LRS) of 102 is maintained for 1000 cycles, thus confirming good retention and cyclic endurance for the resistive switching behavior. Continuous tuning of the state conductance is essential for neuromorphic architectures and hard to achieve with two-terminal memristors.

Artificial Synapse Based on Organic–Inorganic Hybrid Perovskite with Electric and Optical Modulation

“…The reason for this phenomenon may be the existence of KI promoted ion migration in the mixed film along the perovskite grain boundaries. [ 46,47 ]…”

Switched‐On: Progress, Challenges, and Opportunities in Metal Halide Perovskite Transistors

“…This positive development is also accompanied by an overall improvement of device performance, illustrated by the gradual increase in mobility and the emergence of perovskite-based FETs with novel functionalities such as memory. [180,185] Still, many other challenges remain to be addressed, in particular, issues related to device stability, where significantly more research is required.…”

“…Y, Cr, IZO, ITO and graphene represent promising alternatives as robust contact materials, where such reactions do not occur. [93,[141][142][143]149,152,178,180] A solution to the Au interface reactivity problem is treatment with a SAM or insertion of an interlayer. [65] In addition to acting as a physical barrier to electrochemical degradation, these chemical functionalizations allow for the tuning of the injection barrier at the semiconductor/contact interface and, in some cases, assist with improving the perovskite film microstructure by modifying the surface energy.…”

“…Y, Cr, IZO, ITO and graphene represent promising alternatives as robust contact materials, where such reactions do not occur. [ 93,141–143,149,152,178,180 ]…”

“…Switching ratios (high/low) in the range of 100 and retention times of 10 4 s were demonstrated, but the operating window for such devices remained relatively small. [ 180 ] Lee and co‐workers utilized BA 2 PbBr 4 perovskite coated with sputtered indium zinc tin oxide (IZTO) in memory transistors that can be switched from a high‐resistance state to a low‐resistance state following the application of a light pulse for several seconds. [ 184 ] The authors showed that both the wavelength and duration of the light exposure determine the achievable current ratio between the two states, which can be as high as 10 4 .…”