Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

Kotilainen, Minna; Krumpolec, Richard; Franta, Daniel; Souček, Pavel; Homola, Tomáš; Cameron, D.C.; Vuoristo, Petri

doi:10.1016/j.solmat.2017.02.033

Cited by 10 publications

(3 citation statements)

References 31 publications

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“…Due to their high thermal conductivity and excellent corrosion resistance, Cu and its alloys are extensively used in many heat exchange applications. In particular, copper is commonly utilized as a substrate for solar selective absorbers in solar thermal collectors [1,2], while Cu alloys are widely used as combustion chamber liner materials in rocket engines [3]. During operation in these applications, copper components suffer from extremely high thermal loads.…”

Section: Introductionmentioning

confidence: 99%

“…Second, at elevated temperatures copper atoms become mobile, which induces their upward diffusion when Cu-based materials are used as substrates in multilayer structures [9]. As a result, Cu atoms penetrate through above layers and react with oxygen to form copper oxide hillocks on the surface [1,2]. This mechanism leads to material depletion and the formation of Kirkendall voids in the copper substrate causing porosity and loss of strength [1].…”

Section: Introductionmentioning

confidence: 99%

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Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

et al. 2019

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The effect of the elemental composition of AlxSi1−xN coatings deposited on Cu substrates by magnetron sputtering on their structure, mechanical properties and thermal cycling performance is studied. The coatings with Al-Si-N solid solution, two-phase (AlxSi1−xN nanocrystallites embedded in the SixNy tissue phase) and amorphous structure were obtained by varying Al/Si ratio. It is shown that polycrystalline coatings with a low Si content (Al0.88Si0.12N) are characterized by the highest thermal cycling resistance. While the coatings with a high and intermediate Si content (Al0.11Si0.89N and Al0.74Si0.26N) were subjected to cracking and spallation after the first cycle of annealing at a temperature of 1000 °C, delamination of the Al0.88Si0.12N coating was observed after 25 annealing cycles. The Al0.88Si0.12N coating also exhibited the best barrier performance against copper diffusion from the substrate. The effect of thermal stresses on the diffusion barrier performance of the coatings against copper diffusion is discussed.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

et al. 2019

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“…Bu alanlarda üretilen yüksek dielektrik sabitli transistörler [1][2][3][4][5], bellek aygıtları [6][7][8], gaz difüzyon bariyerleri [9][10][11], organik ışık yayan diyotlar (OLED'ler) [12][13][14], esnek elektronik aygıtlar [15], yakıt hücreleri [16][17][18], sensörler [19][20][21], güneş panelleri [22][23][24][25], biyoelektronik cihazlar, implantlar, ilaç sistemleri [26][27][28][29], su ayrıştırma [30][31][32][33] gibi pek çok teknoloji ince film üretim tekniklerinin kullanmasını gerektirmektedir. Magnetron sputtering [34][35][36], moleküler ışın epitaksi (MBE) [37], Spray-pyrolysis [38], sol-gel [39,40], kimyasal buhar biriktirme (CVD) [41,42] ve atomik katman biriktirme (ALD) [43][44][45] gibi fiziksel ve kimyasal yöntemler de dâhil olmak üzere hali hazırda pek çok ince film kaplama ve büyütme teknikleri mevcuttur. Bu üretim teknikleri aras...…”

Section: Gi̇ri̇ş (Introduction)unclassified

Atomik Katman Biriktirme Tekniğine Genel Bakış: Zno, Tio2 Ve Al2o3 Filmlerin Üretimi

Gonullu¹,

Ateş

2019

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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In this study, Atomic Layer Deposition (ALD) technique which has technologically importance to produce thin films angstrom to higher scales and various surfaces were evaluated. To exemplify, ZnO, TiO2 and Al2O3 films on Si wafer were growth by ALD technique until the optimum growth conditions are achieved. Characterizations were made by X-Ray diffraction and spectroscopic ellipsometry techniques and film properties were discussed in terms of technological applications. Figure A. Schematic illustration of ALD thin films and pictures of growth films. Purpose: In the current work, the main purpose is transfer to knowledge about the ALD technique, process and important parameters. However, it is aimed to produce and evaluate ZnO, TiO2 and Al2O3 films in order to observe the functionality of this process. Theory and Methods: Different recipes were implemented to growth thin films by ALD method. Thicknesses and the crystallographic properties were investigated by spectroscopic ellipsometry and X-ray diffraction technique. Results: In this study, ALD technique was considered theoretically in many respects. To explain, thicknesses of growth films using this technique determined by spectroscopic ellipsometry investigations showed various values for different recipes. The most appropriate recipe was found and given in this study by evaluating the thicknesses of the films according to homogeneity. The thicknesses results which showed homogeneity also evaluated by crystallographic structures. XRD results showed that the crystallization only for ZnO films at growth conditions. Conclusion: The basics of the ALD technique were given in this study. Additionally, ZnO, TiO2 and Al2O3 films were growth by this ALD technique and characterized for various recipes in order to be a case study. Most homogeneous film surfaces were determined according to film thicknesses. It was shown that films with homogeneous surfaces can be growth with this technique. Also, it is determined that the some films have amorphous crystal structures while the other has crystalline under growth conditions. All data were evaluated in point of the technological applications.

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Optical Properties of Solar Absorber Materials and Structures

Zang

Zhang

et al. 2021

Topics in Applied Physics

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Hafnium oxide thin films as a barrier against copper diffusion in solar absorbers

Cited by 10 publications

References 31 publications

Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

Improvement of Thermal Cycling Resistance of AlxSi1−xN Coatings on Cu Substrates by Optimizing Al/Si Ratio

Atomik Katman Biriktirme Tekniğine Genel Bakış: Zno, Tio2 Ve Al2o3 Filmlerin Üretimi

Optical Properties of Solar Absorber Materials and Structures

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