Atomik Katman Biriktirme Tekniğine Genel Bakış: Zno, Tio2 Ve Al2o3 Filmlerin Üretimi

Abstract

In this study, Atomic Layer Deposition (ALD) technique which has technologically importance to produce thin films angstrom to higher scales and various surfaces were evaluated. To exemplify, ZnO, TiO2 and Al2O3 films on Si wafer were growth by ALD technique until the optimum growth conditions are achieved. Characterizations were made by X-Ray diffraction and spectroscopic ellipsometry techniques and film properties were discussed in terms of technological applications. Figure A. Schematic illustration of ALD thin films and pictures of growth films. Purpose: In the current work, the main purpose is transfer to knowledge about the ALD technique, process and important parameters. However, it is aimed to produce and evaluate ZnO, TiO2 and Al2O3 films in order to observe the functionality of this process. Theory and Methods: Different recipes were implemented to growth thin films by ALD method. Thicknesses and the crystallographic properties were investigated by spectroscopic ellipsometry and X-ray diffraction technique. Results: In this study, ALD technique was considered theoretically in many respects. To explain, thicknesses of growth films using this technique determined by spectroscopic ellipsometry investigations showed various values for different recipes. The most appropriate recipe was found and given in this study by evaluating the thicknesses of the films according to homogeneity. The thicknesses results which showed homogeneity also evaluated by crystallographic structures. XRD results showed that the crystallization only for ZnO films at growth conditions. Conclusion: The basics of the ALD technique were given in this study. Additionally, ZnO, TiO2 and Al2O3 films were growth by this ALD technique and characterized for various recipes in order to be a case study. Most homogeneous film surfaces were determined according to film thicknesses. It was shown that films with homogeneous surfaces can be growth with this technique. Also, it is determined that the some films have amorphous crystal structures while the other has crystalline under growth conditions. All data were evaluated in point of the technological applications.