Hafnium-Indium-Zinc oxide thin film transistors using HfO&lt;inf&gt;2&lt;/inf&gt; as gate dielectric, with both layers deposited by RF sputtering

Pons-Flores, C. A.; Hernandez, I.; Estrada, M.; Garduno, I.; Cerdeira, A.; Tinoco, J. C.; Mejía, I.; Picos, R.

doi:10.1109/sbmicro.2016.7731318

Cited by 1 publication

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“…In a previous work [20] , we reported all RF magnetron sputtering at room temperature HIZO TFTs with HfO 2 as gate dielectric and metal-insulator-semiconductor (MIS) structures, with low operation voltage range. Since these devices are suitable to work at low operation voltages, in this work we analyze the stability in NGBS and PGBS, as well as the contact resistance with Al as metal contact.…”

Section: Introductionmentioning

confidence: 99%

Bias Stress Effects in Low Temperature Amorphous Hf-In-ZnO TFTs Using RF-sputtering HfO2 as High-k Gate Dielectric

Pons-Flores¹,

Hernandez²,

Garduno³

et al. 2020

JICS

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In this work we analyze the electrical performance, contact resistance and the effects of positive and negative gatebias stress of Hf-In-ZnO/HfO2 thin film transistors. Devices were fabricated using RF-magnetron sputtering at room temperature and fully patterned, with operation voltage below 6 V. Devices with drain-currents up to 2x10-6 A and threshold voltages of ~2 V were analyzed under negative and positive gate bias stress. Devices under negative gate-bias stress showed a slightly threshold voltage shift due to the transistor channel is depleted of electrons at the channel/dielectric interface. Devices under positive gate-bias stress, showed threshold voltage shifts in the negative direction due to the reversible charge/discharge effect of the electrons in pre-existing high-k HfO2 bulk traps. Positive gate-bias stress does not cause any degeneration, since stressed devices tend to recover after 5 mins.

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Section: Introductionmentioning

confidence: 99%