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           vapor-induced leakage degradation of Pb(Zr,Ti)O3 thin-film capacitors with Pt and IrO2 electrodes

Baniecki, J. D.; Cross, Jeffrey S.; Tsukada, Masaru; Watanabe, J.

doi:10.1063/1.1519359

Cited by 46 publications

(25 citation statements)

References 11 publications

(8 reference statements)

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“…A systematic understanding of the reactions is of great importance for improving the reliability of metal oxide-based electronic components and devices. 7 For many oxide-based components and devices, the degradation induced by the reaction of hydrogen is permanent and stable at room temperature. Sometimes, an annealing in an oxidizing atmosphere can recover the degraded properties.…”

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confidence: 99%

Spontaneous recovery of hydrogen-degraded TiO2 ceramic capacitors

Chen

Wang

Dai

et al. 2004

Applied Physics Letters

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Degradation of TiO 2 -based ceramic capacitors was observed after hydrogen incorporation on the termination electrodes of the capacitors via electrolysis of water. Fourier-transform infrared ͑FTIR͒ absorption spectra analysis of polished rutile single crystals clearly showed that hydrogen was incorporated into the TiO 2 lattice through the treatment. Hydrogen reduces Ti 4ϩ to Ti 3ϩ and increases the concentration of charge carriers. The degradation was found to exhibit a strong dependence on time at room temperature. The degraded properties were spontaneously recovered through an aging process, showing a spontaneous recovery unique to TiO 2 -based ceramic capacitors. It is proposed that hydrogen is metastable in TiO 2 and that hydrogen-induced degradation has different stabilities among various oxide-based components and devices. © 2004 American Institute of Physics. ͓DOI: 10.1063/1.1637942͔The effects of hydrogen incorporation in materials have been extensively studied, particularly on metals ͑hydrogen embrittlement͒ and silicon-based devices ͑passivation of dangling bonds͒. In recent years, however, more and more attention has been paid to the reactions between hydrogen and metal oxide materials. [1][2][3] In our previous studies, we found that hydrogen reacts with many metal oxides at an ambient temperature in some electrochemical processes, including electroplating 4 and the electrolysis of water. 5,6 These ambient temperature reactions usually induce obvious degradations in the properties of these oxide-based components and devices. A systematic understanding of the reactions is of great importance for improving the reliability of metal oxide-based electronic components and devices. 7For many oxide-based components and devices, the degradation induced by the reaction of hydrogen is permanent and stable at room temperature. Sometimes, an annealing in an oxidizing atmosphere can recover the degraded properties. 4,8 Obviously, the hydrogen-induced defects in those oxides responsible for the degradation can only be eliminated by high-temperature oxidizing reactions. When we studied hydrogen-induced degradation in TiO 2 -based ceramic capacitors, however, we obtained a quite unexpected result. Although hydrogen induces an obvious degradation in the capacitors, the degraded properties exhibit a strong dependence on time, and the degradation is gradually recovered through an aging process without any thermal treatment. This indicates that hydrogen-induced defects are only metastable in TiO 2 -based ceramic capacitors at room temperature, in contrast to hydrogen-induced defects in many other oxides.The composition and sintering of the TiO 2 -based temperature-compensating ceramic capacitors used in the present investigation were reported in another paper. 9 The capacitors were 0.70 mm thick and 7.5 mm in diameter, with a 4.5 mm diameter silver electrode on one surface and a 5.5 mm diameter silver electrode on the other surface. Some capacitors were placed in a 0.01 M NaOH solution and dc voltages were imposed betwe...

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confidence: 99%

Spontaneous recovery of hydrogen-degraded TiO2 ceramic capacitors

Chen

Wang

Dai

et al. 2004

Applied Physics Letters

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“…Pt is also usually used as a top electrode [8]; however, when Pt is employed, the ferroelectric properties of the PZT film may become damaged due to the annealing of hydrogen in ambient air [11]. Therefore, other materials must be investigated for the top electrode.…”

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Influence of the Top Metal Electrode on P-V Hysteresis Loops Behavior of 1-μm Thick PZT Films Deposited on a Pt/TiN/Si Substrate Prepared by MOCVD

Masruroh

Umeda²,

Takada

2013

AMM

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Abstract. The effect of various top electrodes (Au, Ag, Cu and Al) on the hysteresis loop behavior of 1-µm thick PZT has been investigated. The PZT films and PT bottom electrode were prepared by MOCVD, and various top electrodes were deposited by evaporation. Using an Ag and Cu top electrode, an improvement in the polarization hysteresis loops of PZT films was observed compared to the other electrodes (Au and Al). A well-saturated P-V hysteresis loop was obtained when Ag and Cu top electrodes were applied. By applying an Au electrode, a decrease in polarization was observed, and the Al top electrode produced P-V hysteresis loops with para-electric behavior. The improvement in the polarization hysteresis loops was affected by the electrical conductivity of the top metal electrode. Namely, a faster supply of compensation charges, which are required to bind polarization charges located near the interface in PZT films, was obtained as the conductivity of the top electrode increased. The electrical conductivity of the metals displayed the following trend: (Ag>Cu>Au>Al).

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“…For instance, it has been reported that the properties of PZT films are intensely sensitive to vapor H 2 O in air. 32 This means that the interface at the PZT/top electrode has significant traps and defects introduced during the process compared to the bottom electrode/PZT interface. The decrease in V cþ with temperature indicates that these traps have a net negative polarity, possibly due to adsorbed water or hydrogenous species.…”

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Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Ghoneim

Hussain

2015

Applied Physics Letters

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H 2 O vapor-induced leakage degradation of Pb(Zr,Ti)O3 thin-film capacitors with Pt and IrO2 electrodes

Abstract: Articles you may be interested inModification of energy band alignment and electric properties of Pt/Ba0.6Sr0.4TiO3/Pt thin-film ferroelectric varactors by Ag impurities at interfaces

Cited by 46 publications

References 11 publications

Spontaneous recovery of hydrogen-degraded TiO2 ceramic capacitors

Spontaneous recovery of hydrogen-degraded TiO2 ceramic capacitors

Influence of the Top Metal Electrode on P-V Hysteresis Loops Behavior of 1-μm Thick PZT Films Deposited on a Pt/TiN/Si Substrate Prepared by MOCVD

Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

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