Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching

Abstract

Redox-based memristor devices, which are considered to have promising nonvolatile memory, mainly operate through the formation/rupture of nanoscale conductive filaments. However, the random growth of conductive filaments is an obstacle for the stability of memory devices and the cell-to-cell uniformity. Here, we investigate the guiding effect of nanoindentation on the growth of conductive filaments in resistive memory devices. The nanoindented top electrodes generate an electric field concentration and the resultant precise control of a conductive filament in two typical memory devices, Ag/SiO/Pt and W/TaO/Pt. The nanoindented cells possess a much larger ON/OFF ratio, a sharper RESET process, a higher response speed, and better cell-to-cell uniformity compared with the conventional cells. Our finding reflects that the use of large-scale nanotransfer printing might be a unique way to improve the performance of resistive random access memory.

Silver Nanofilament Formation Dynamics in a Polymer‐Ionic Liquid Thin Film by Direct Write

“…C-AFM enables the direct writing of nanofilaments by precisely defining the nucleation sites, yielding more uniform nucleation and growth. [18,19] Using an automated script, nanofilament formation events at hundreds of xy locations on the film are recorded as a function of applied bias. This spatially dense sampling allows us to fully capture the stochasticity of nanofilament growth and enables statistical analyses of the data, which are particularly crucial for a polymer electrolyte containing microscopic heterogeneities.…”

Ultra compact electrochemical metallization cells offering reproducible atomic scale memristive switching

“…To make atomic scale devices practical, a path toward a more reproducible technology providing devices with a high endurance is needed. And indeed, geometry engineering has already shown promise toward this goal [20][21][22][23] . Researchers already demonstrated that they could lower the mean switching voltages from 1.11 to 0.27 V and improve the cycle-to-cycle variance when transitioning from a flat to a tip-like electrode shape 21 .…”

Электрофизические Характеристики Многослойных Мемристивных Наноструктур На Основе Стабилизированного Иттрием Диоксида Циркония И Оксида Тантала

“…Управление воспроизводимостью мемристивного эффекта может быть осуществлено путем формирования специальных концентраторов электрического поля [2], определяющих параметры проводящих каналов (филаментов), с разрушением и восстановлением которых связано резистивное переключение, а также путем выбора (инженерии) материалов в мемристивной структуре [3,4]. Используется также адаптивное программирование резистивного состояния путем коррекции параметров переключающих импульсов напряжения в зависимости от результата программирования [5][6][7].…”