Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

Proano, R.E.; Misage, R.S.; Jones, Derick; Ast, D. G.

doi:10.1109/16.119014

Cited by 16 publications

(3 citation statements)

References 10 publications

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“…This challenge is due, in part, to difficulties involved in formulating electroluminescent and electroactive polymers with photoresist-compatible properties. This problem has been circumvented by elegant direct deposition methods, such as ink jet printing and screen printing, or by overlaying filters and diffusing color dyes in light emitting backplanes. While these approaches are adequate for relatively large features (tens of micrometers), they possess serious implementation limitations as the features approach the micrometer and sub-micrometer levels.…”

Section: Introductionmentioning

confidence: 99%

Cross-Linked Polyfluorene Polymer Precursors: Electrodeposition, PLED Device Characterization, and Two-Site Co-deposition with Poly(vinylcarbazole)

2005

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Electropolymerization of π-conjugated polymers is considered as an alternative method for depositing and patterning charge injection, transport, and luminescent layers in organic electronic devices. In this study, a series of novel poly(fluoren-9,9-diyl-alt-alkan-R,ω-diyl) polymers with increasing alkyl spacer lengths were synthesized and used as precursors for the deposition of conjugated polymers formed by the oxidative coupling of the fluorene units. The precursor polymers and their conjugated polymer network were characterized in solution and in film form, and their charge-transport characteristics were investigated by fabricating electroluminescent polymer light emitting diode (PLED) devices. Interesting charge carrier transport properties based on thickness and co-deposition with another precursor polymer gives the potential for optimized solid-state device performance and film processing conditions. Finally, a "two-pixel" prototype PLED was demonstrated using a sequential electrochemical co-deposition method with poly-(vinylcarbazole) (PVK).

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Section: Introductionmentioning

confidence: 99%

Cross-Linked Polyfluorene Polymer Precursors: Electrodeposition, PLED Device Characterization, and Two-Site Co-deposition with Poly(vinylcarbazole)

2005

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“…Poly-Si TFTs (Polycrystalline Silicon Thin Film Transistors) have attracted considerable attentions for high-resolution AMLCD due to a high mobility and a current driving capability [1]. As the pixel size becomes small, an aperture ratio decreases because TFT size and line width may not be decreased.…”

Section: Introductionmentioning

confidence: 99%

P‐1: A New TFT‐LCD Panel Structure with High Aperture Ratio and Small Signal Delay by fabrication TFT in Line‐Crossover

Park

Lee

Kim

et al. 2001

Symp Digest of Tech Papers

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We have proposed and fabricated a poly-Si TFT integrated gatedata line-crossover structure in order to increase the aperture ratio and to reduce the signal delay. The poly-Si TFT is integrated in the gate-data line-crossover without sacrificing the electrical characteristics so that the aperture ratio of the panel was improved by about 3% because the TFT is located under a metal line. We employ a low dielectric air-gap between the gate-data line crossover, which reduces the capacitance between the gate and the data lines, so that the signal delay of the data line is decreased significantly. The fabricated TFT was successfully operated, and the proposed structure reduces the delay time by about 9 times compared with the conventional panel that does not employ any air-bridges. IntroductionPoly-Si TFTs (Polycrystalline Silicon Thin Film Transistors) have attracted considerable attentions for high-resolution AMLCD due to a high mobility and a current driving capability [1]. As the pixel size becomes small, an aperture ratio decreases because TFT size and line width may not be decreased. It is desirable to design a small size pixel for poly-Si TFT-LCD with a high aperture ratio. The signal delay of data-lines in a large high-resolution AMLCD panel may be also a critical problem and it may be increased with panel size [2].The purpose of our work is to propose a new TFT which integrates a TFT at a gate-data line-crossover in order to improve the aperture ratio of the panel [3]. We also employ a low dielectric air-gap in the gate-data line crossover [4], which reduces the capacitance between the gate and the data lines so that the signal delay of the data line is decreased significantly. The new panel is successfully fabricated by locating the TFT under the data line. An air-gap between the data line bridge and the TFT below the data line were successfully formed by a sacrificial photoresist layer. Structure & Fabrication 2.1 Proposed Panel StructureIn the proposed line-crossover structure, we located top-gate polyTFTs in the gate-data line-crossovers. The layouts of the proposed pixel and the conventional one are shown in Fig. 1. In the proposed pixel structure, an active area is located at the bottom of the data line and the data lines cover TFTs completely. TFTs in the proposed panel are integrated between the metal lines so that the aperture ratio of the panel was improved by the size of TFTs. It should be noted that TFTs are not optically transparent. In comparison with the conventional panel, TFTs based on the proposed panel are integrated between the metal lines so that the aperture ratio of the panel is improved by approximately 3% per whole pixel area. The relative aperture-ratio improvement is larger as the panel resolution is higher because the high-resolution panel has a low aperture-ratio. For example, the aperture-ratio of SXGA panel (1280×1024 pixels) is only 33% while that of SVGA panel (800×600 pixels) is 65%. So the relative apertureratio improvement is about 10% in the case of SXGA or higher resolution...

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“…[1][2][3] Other potential applications include spatial light modulator systems, 4 high speed printers 5 and light valves. 6 High voltage thin film transistors ͑HVTFTs͒ differ from low voltage devices in that the drain contact is offset with respect to the gate edge.…”

mentioning

confidence: 99%

Polycrystalline silicon thin film transistor incorporating a semi-insulating field plate for high voltage circuitry on glass

Clough

Narayanan

Chen

et al. 1997

Applied Physics Letters

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Guest-host active matrix liquid-crystal display using high-voltage polysilicon thin-film transistors

Cited by 16 publications

References 10 publications

Cross-Linked Polyfluorene Polymer Precursors: Electrodeposition, PLED Device Characterization, and Two-Site Co-deposition with Poly(vinylcarbazole)

Cross-Linked Polyfluorene Polymer Precursors: Electrodeposition, PLED Device Characterization, and Two-Site Co-deposition with Poly(vinylcarbazole)

P‐1: A New TFT‐LCD Panel Structure with High Aperture Ratio and Small Signal Delay by fabrication TFT in Line‐Crossover

Polycrystalline silicon thin film transistor incorporating a semi-insulating field plate for high voltage circuitry on glass

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