Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires

Schmidt, Volker; Wittemann, Joerg V.; Gösele, U.

doi:10.1021/cr900141g

Cited by 493 publications

(473 citation statements)

References 230 publications

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“…Axial and radial (core/shell) modulated NWs have 1 and 2 DoF, respectively, and have been extensively studied and characterized. 2,[13][14][15][16][17][18][19] Nevertheless, the properties of nanostructures possessing greater complexity and anisotropy have not been determined.A nanostructure with 3 DoF and higher can be realized by breaking the rotational symmetry of conventional radial shell growth ( Figure 1A). A high-resolution scanning electron micrograph (SEM) of a faceted core/shell Si NW ( Figure 1B) reveals well-defined surfaces that were previously indexed 9 as {111}, {011}, and {113}.…”

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confidence: 99%

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Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Kempa¹,

Kim

Day

et al. 2013

J. Am. Chem. Soc.

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Enhanced synthetic control of the morphology, crystal structure, and composition of nanostructures can drive advances in nanoscale devices. Axial and radial semiconductor nanowires are examples of nanostructures with one and two structural degrees of freedom, respectively, and their synthetically tuned and modulated properties have led to advances in nanotransistor, nanophotonic, and thermoelectric devices. Similarly, developing methods that allow for synthetic control of greater than two degrees of freedom could enable new opportunities for functional nanostructures. Here we demonstrate the first regioselective nanowire shell synthesis in studies of Ge and Si growth on faceted Si nanowire surfaces. The selectively deposited Ge is crystalline and its facet position can be synthetically controlled in situ. We use this synthesis to prepare electrically-addressable nanocavities into which solution soluble species such as Au nanoparticles can be incorporated. The method furnishes multi-component nanostructures with unique photonic properties and presents a more sophisticated nanodevice platform for future applications in catalysis and photodetection.Semiconductor nanowires (NWs) represent a diverse class of nanomaterials whose synthetically-tunable structural, electronic, and optical properties 1-3 have enabled active nanodevices including high-performance field-effect transistors, 4 ultra-sensitive biological probes, 5-7 and solar cells and photonic devices with tunable optical spectra. [8][9][10][11][12] NWs can be classified according to the number of degrees of freedom (DoF) they possess, which represent fundamental physical coordinates along which their structure can be manipulated. Axial and radial (core/shell) modulated NWs have 1 and 2 DoF, respectively, and have been extensively studied and characterized. 2,[13][14][15][16][17][18][19] Nevertheless, the properties of nanostructures possessing greater complexity and anisotropy have not been determined.A nanostructure with 3 DoF and higher can be realized by breaking the rotational symmetry of conventional radial shell growth ( Figure 1A). A high-resolution scanning electron micrograph (SEM) of a faceted core/shell Si NW ( Figure 1B) reveals well-defined surfaces that were previously indexed 9 as {111}, {011}, and {113}. NWs with this same morphology and set of surface facets serve as the faceted templates from which all subsequent nanostructures in this study are grown. Following chemical vapor deposition (CVD) synthesis of the SiNW templates, 9 introduction of GeH 4 and H 2 at lower tem- perature and pressure into the same reactor (Supporting Information) yields a new product featuring selective material deposition on the {111} and {011} Si surface facets ( Figure 1B). Energy dispersive x-ray spectroscopy (EDS) performed on the nanostructure ( Figure 1C) confirms the elemental identity of the deposited material as Ge and reveals that facet selectivity is preserved along the length of the nanostructure. A planview transmission electron micrograph (...

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confidence: 99%

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confidence: 99%

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Kempa¹,

Kim

Day

et al. 2013

J. Am. Chem. Soc.

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“…It was previously reported that silicide could be employed as a catalyst for Si nanowire growth. [6][7][8] The direction of the Si nanowire is Si[111] as shown in Fig. 4(b 47 , is not identified in detail.…”

Section: Methodsmentioning

confidence: 99%

“…Alternative catalysts for vapor-solid-solid (VSS) growth have been proposed with advantages such as reduced growth temperature, lower levels of undesired impurity doping, and the formation of an abrupt heterointerface. 6,7 Various types of metal catalysts have been employed for VSS growth. However, it should be noted that the resulting nanowire products were strongly faceted, such as for example, in the case of Pd catalyst.…”

Section: Introductionmentioning

confidence: 99%

Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

Meng

Nakane

et al. 2013

AIP Advances

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The shape modification of Si nanowires is demonstrated using faceted solid silicide catalysts. The Si nanowires were grown on Si(111) substrates covered with Au as a catalyst using MnCl2 and Si powders as source materials. The solid silicide catalysts were nucleated and formed in the Au-Si catalyst solution at the top of the nanowires during the growth. The faceted solid silicides grew larger with increased growth time and played a role as a solid catalyst. The faceted shape of the catalyst defines the shape of the faceted Si nanowire. The squared Si nanowires were grown with the growth direction of Si[111] and the sidewalls of {110} and {211} planes. The growth evolution of the faceted Si nanowires occurs by a vapor-liquid-solid mechanism followed by the silicide vapor-solid-solid mechanism

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“…[97] The VLS method is usually carried out in the chemical vapor deposition (CVD) reactor by using silicon-containing gas as silicon sources, such as silane (SiH 4 ) or tetrachloride (SiCl 4 ), and the reaction temperature varies from 300 to 1000 C depending on the gas precursor and different kinds of metal catalysts utilized in the fabrication process. [98,99] In 2007, Chan et al presented a direct growth of Si NWs on the stainless-steel current collector by VLS synthesis method with Au as catalyst. [39] When tested as an anode material, an extremely high reversible capacity of 3124 mAh g À1 at a current density of 0.05 C was obtained in the first charge process and the initial Coulombic efficiency was 73%.…”

Section: Nanowiresmentioning

confidence: 99%

Rationally Designed Silicon Nanostructures as Anode Material for Lithium‐Ion Batteries

et al. 2017

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Silicon (Si) is promising for high capacity anodes in lithium-ion batteries due to its high theoretical capacity, low working potential, and natural abundance. However, there are two main drawbacks that impede its further practical applications. One is the huge volume expansion generating during lithiation and delithiation progresses, which leads to severe structural pulverization and subsequently rapid capacity fading of the electrode. The other is the relatively low intrinsic electronic conductivity, therefore, seriously impacting the rate performance. In the past decades, numerous efforts have been devoted for improving the cycling stability and rate capability by rational designs of different nanostructures of Si materials and incorporations with some conductive agents. In this review, the authors summarize the exciting recent research works and focus on not only the synthesis techniques, but also the composition strategies of silicon nanostructures. The advantages and disadvantages of the nanostructures as well as the perspective of this research field are also discussed. We aim to give some reference for engineering application on Si anodes in lithium ion batteries.

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Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires

Cited by 493 publications

References 230 publications

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

Rationally Designed Silicon Nanostructures as Anode Material for Lithium‐Ion Batteries

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