Growth temperature altered morphology of Ge nanocolumns

Khare, Chinmay; Gerlach, Jürgen W.; Weise, Michael; Bauer, Jens; Höche, Thomas; Rauschenbach, B.

doi:10.1002/pssa.201026545

Cited by 13 publications

(8 citation statements)

References 35 publications

(52 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Fih, GLAD is adaptable to a wide variety of materials, including low T m (T m : melting point) materials (e.g. Ag, 2 Au, 3 Cu, 4 Al, 5 Ge, 6 tris(8-hydroxyquinolinato) aluminium, 7 C 60 , 8 zinc phthalocyanine 9 ) and high T m species (e.g. Si, 10 SiO 2 , 11 TiO 2 , 12 Al 2 O 3 , 13 ZrO 2 , 14 HfO 2 , 15 MgF 2 , 16 indium tin oxide (ITO), 17 InN, 18 WO 3 , 19 Ta, 20 W, 21 Fe, 22 Cr, 23 Co 24 ).…”

Section: Introductionmentioning

confidence: 99%

Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Huang

Bai

2014

Nanoscale

View full text Add to dashboard Cite

Minimization of helices opens a door to impose novel functions derived from the dimensional shrinkage of optical, mechanical and electronic devices. Glancing angle deposition (GLAD) enables one to deposit three-dimensional helical porous thin films (HPTFs) composed of separated spiral micro/nano-columns. GLAD integrates a series of advantageous features, including one-step deposition, wafer-scale production with mono-handedness of spirals, flexible engineering of spiral materials and dimensions, and the adaption to various kinds of substrates. Herein, we briefly review the fabrication of HPTFs by GLAD, specific growth mechanisms, physical properties in structures, mechanics and chiral optics, and the emerging applications in green energy. A prospective outlook is presented to illuminate some promising developments in enantioselection, bio-dynamic analyses, wirelessly-controlled drug delivery and mass production.

show abstract

Section: Introductionmentioning

confidence: 99%

Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Huang

Bai

2014

Nanoscale

View full text Add to dashboard Cite

show abstract

“…While the cluster ions travel in a horizontal plane, the effusion cell and the triple evaporator are attached to the deposition chamber pointing almost vertically upward: They are rotated by 70 • from the horizontal and laterally by ±17 • to different sides with the rotation center equal to the sample position, as shown in the sketch of the CIBD system in Figure 1. In order to avoid columnar growth of the matrix due to shadowing effects [43], Fe-Ge samples were tilted by 35 • from the horizontal for deposition. A side effect of the differing deposition angles is an offset between cluster ion beam, effusion cell and triple evaporator deposition areas due to the used deposition mask.…”

Section: Methodsmentioning

confidence: 99%

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

et al. 2020

View full text Add to dashboard Cite

The combination of magnetic and semiconducting properties in one material system has great potential for integration of emerging spintronics with conventional semiconductor technology. One standard route for the synthesis of magnetic semiconductors is doping of semiconductors with magnetic atoms. In many semiconductor–magnetic–dopant systems, the magnetic atoms form precipitates within the semiconducting matrix. An alternative and controlled way to realize such nanocomposite materials is the assembly by codeposition of size-selected cluster ions and a semiconductor. Here we follow the latter approach to demonstrate that this fabrication route can be used to independently study the influence of cluster concentration and cluster size on magneto-transport properties. In this case we study Fe clusters composed of approximately 500 or 1000 atoms softlanded into a thermally evaporated amorphous Ge matrix. The analysis of field and temperature dependent transport shows that tunneling processes affected by Coulomb blockade dominate at low temperatures. The nanocomposites show saturating tunneling magnetoresistance, additionally superimposed by at least one other effect not saturating upon the maximum applied field of 6 T. The nanocomposites’ resistivity and the observed tunneling magnetoresistance depend exponentially on the average distance between cluster surfaces. On the contrary, there is no notable influence of the cluster size on the tunneling magnetoresistance.

show abstract

“…The mass flow of f O2 ¼ 160 sccm was kept constant for t O2 ¼ 10 and 14 min (for D ¼ 535 nm) and t O2 ¼ 14 and 35 min (for D ¼ 722 nm) to achieve isolated PS nanospheres of diameters D plasma ¼ 200 and 100 nm, respectively, as schematically sketched in Fig. After the patterning procedure, ion beam sputter GLAD of Ge was carried out in a high vacuum deposition chamber with a base pressure 1.0 Â 10 À8 mbar as described elsewhere [8][9][10]21,[26][27][28] . Subsequently, in order to produce cylindrical Si seeds on these substrates, inductively coupled plasma reactive ion etching was performed 24,25 (ICP-RIE: Plasmalab 100 Oxford Instruments Plasma Technology) with an ICP source (2 MHz, 1200 W) and an RIE source (13.56 MHz, 45 W).…”

Section: Methodsmentioning

confidence: 99%

“…[7][8][9][10] Such sculptured thin films offer multiple applications, namely in photonic crystals, 11 polarization filters, 12 antireflection coatings, 13 biosensing, 14,15 pressure sensing, 16 and humidity sensing. 21 Instead, it may be possible to grow Ge nanostructures on Si patterned substrates at room temperature, and then alternatively retain the distinct GLAD morphologies upon post-deposition annealing processes. Even though the required crystalline Ge-GLAD nanostructures can, in principle, be obtained by depositing films at elevated substrate temperatures, the GLAD-inherent columnar morphology is significantly altered by diffusion-driven processes.…”

Section: Introductionmentioning

confidence: 99%

Optimized growth of Ge nanorod arrays on Si patterns

Khare

Fuhrmann

Leipner

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Articles you may be interested inBlock copolymer self assembly for design and vapor-phase synthesis of nanostructured antireflective surfaces J. Vac. Sci. Technol. B 32, 06FE02 (2014); 10.1116/1.4896335 Ordered arrays of Si and Ge nanocrystals via dewetting of pre-patterned thin films J. Appl. Phys. 113, 064908 (2013); 10.1063/1.4790713 Cross-sectional sizes and emission wavelengths of regularly patterned GaN and core-shell InGaN/GaN quantum-well nanorod arrays J. Appl. Phys. 113, 054315 (2013); 10.1063/1.4790710 Sub-30nm pitch line-space patterning of semiconductor and dielectric materials using directed self-assembly J. Vac. Sci. Technol. B 30, 06F205 (2012); 10.1116/1.4767237Glancing angle deposition of Ge nanorod arrays on Si patterned substrates Self-assembly of polystyrene nanospheres and reactive ion etching have been used to seed Si substrates on which Ge nanorods could be grown by glancing angle deposition (GLAD). This method enables production of large area planar-closed-packed arrays of Ge-GLAD nanostructures on Si seed patterns. A strong column competition on a broad seed width (w s ) and a narrow interseed separation distance (R s ) causes the growth of closely bunched multiple structures on the Si seeds. Nanorod growth optimization is realized through the systematic variation of Si seed widths (w s ) and the interseed separation distance (R s ), which enable the growth of singular nanorods on each Si seed.

show abstract

Growth temperature altered morphology of Ge nanocolumns

Cited by 13 publications

References 35 publications

Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Wafer-scale, three-dimensional helical porous thin films deposited at a glancing angle

Magnetotransport Properties of Ferromagnetic Nanoparticles in a Semiconductor Matrix Studied by Precise Size-Selective Cluster Ion Beam Deposition

Optimized growth of Ge nanorod arrays on Si patterns

Contact Info

Product

Resources

About