Growth, structural and optical properties of ZnO-ZnMgO-MgO nanocomposites and their photocatalytic activity under sunlight irradiation

Abed, Chayma; Ali, Monaam Ben; Addad, Ahmad; Elhouichet, Habib

doi:10.1016/j.materresbull.2018.10.041

Cited by 48 publications

(15 citation statements)

References 45 publications

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“…It can be observed three peaks with maxima at 2θ = 34.31°; 34.45° and 34.59°. The main peak at 34.45° was related to the (002) reflection, while the other two were assigned to ZnMgO phase, as demonstrated previous works with samples elaborated by sol-gel method [12,21]. Extra peaks related to Al2O3 or MgAl2O4 phases were not detected.…”

Section: Structural Properties Of the Zno-mgo:al 2 O 3 (10:2 Wt %) Tasupporting

confidence: 74%

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

et al. 2020

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In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

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Section: Structural Properties Of the Zno-mgo:al 2 O 3 (10:2 Wt %) Tasupporting

confidence: 74%

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

et al. 2020

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“…The MgZnO is usually synthesized by sol–gel method followed by high temperature annealing at 300–400 °C, which is incompatible for flexible devices. Therefore, the alternative low‐temperature processed method has been developed by Zhang et al So far, MgZnO has been used for different applications, which includes colloidal bulk heterojunction organic photovoltaics, colloidal quantum dot solar cells, quantum dot light‐emitting diodes, photocatalysis, polymer–oxide hybrid solar cells, quantum‐well in photodiode application, and buffer layer for CdTe‐solar cells . In case of PSCs, the MgZnO has been used for organic–inorganic MAPbI 3 ‐based PSCs.…”

Section: Photovoltaic Performance Of Mncl2:cspbi2br‐based Ai‐pscs Formentioning

confidence: 99%

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Mali

Patil

Hong

2019

Advanced Energy Materials

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employed in order to make stable perovskite phase, which includes incorporation of inorganic cations at A-site and/or B-site with mixed halides. However, still methylammonium (MA) or formamidinium (FA) cations suffered from low thermal stability. [9][10][11] Therefore, allinorganic cesium lead halide (CsPbX 3 ) attracted tremendous attention due to its thermal stability and promising optoelectronicproperties. [12][13][14][15][16][17] Unfortunately, Cs-based all-inorganic perovskites especially CsPbI 3 are suffer from poor stability due to their thermodynamically unstable phase. The photoactive cubic alpha (α)−phase (black phase) simultaneously transforms to the orthorhombic photo inactive delta (δ)−phase (yellow phase), which is thermodynamically stable at room temperature. [12,[18][19][20][21][22][23] Therefore, it is necessary to make stable α-phase using adequate composition and deposition techniques. Several methods have been used to maintain the stable α-CsPbI 3 black phase, which includes controlled grain growth, [24] size controlling to the quantum dots (QDs), [25,26] solvent engineering process, [27] additives [18,[28][29][30] airquenching, [31,32] and metal-ion doping. [33][34][35][36][37][38][39][40][41][42][43][44][45] In case of Mn 2± doped CsPbIBr 2 , Liang et al. used Mn-doped all-inorganic perovskites having CsPb 1−x Mn x I 1+2x Br 2−2x (where x = 0.005) composition for hole transporting materials (HTMs) free (C-PSCs) and demonstrated 7.36% PCE with >300 h stability in ambient condition, which is much higher than pristine CsPbI 2 Br composition. [36] However, the dynamic hot-air process with metal ion doped CsPbI 2 Br makes stable α-phase at ambient condition. [46] Although alternative methods including postair flow, [47] coevaporation, [48] and vacuum flash [49] have been used for deposition of this CsPbX 3 layer. However, the solvent engineering process still yields the best efficiency for CsPbI 2 Br composition. [24] Thus, in the CsPbI 2 Br films, the prototypal allinorganic perovskite, the quality of the film (crystallinity and thickness), dominates the photovoltaic performance. Obtaining >1 µm grain size in the CsPbI 2 Br film by this method is easy but difficult to achieve in vertical direction and air processing The high thermal stability and facile synthesis of CsPbI 2 Br all-inorganic perovskite solar cells (AI-PSCs) have attracted tremendous attention. As far as electron-transporting layers (ETLs) are concerned, low temperature processing and reduced interfacial recombination centers through tunable energy levels determine the feasibility of the perovskite devices. Although the TiO 2 is the most popular ETL used in PSCs, its processing temperature and moderate electron mobility hamper the performance and feasibility. Herein, the highly stable, low-temperature processed MgZnO nanocrystal-based ETLs for dynamic hot-air processed Mn 2+ incorporated CsPbI2Br AI-PSCs are reported. By holding its regular planar "n-i-p" type device architecture, the MgZnO ETL and poly(3-hexylthiophene-2,5diyl) h...

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“…Two broad bands at about 565 cm -1 and 1100 cm -1 were observed in the Raman spectra. These bands represented the A 1 (LO) and 2A 1 (LO) modes of wurtzite ZnO, respectively [43][44][45][46][47][48]. In A 1 mode dominated by oxygen, the atoms move parallel to the c-axis.…”

Section: Raman Analysismentioning

confidence: 99%

Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

Kutlu¹,

Erdogan²,

Sedefoğlu³

et al. 2021

Preprint

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This study reports the effect of annealing temperature on the structural, morphological, and optical properties of ZnO (Zinc Oxide) thin films deposited on a glass substrate by the sol-gel spin coating method. Those properties of ZnO were examined with UV-Vis, Fourier transform infrared (FTIR) and Raman spectroscopy, Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray diffraction (XRD), before and after annealing. XRD results revealed that all the samples had a highly c-axis oriented wurtzite structure. A 1 (LO) mode in Raman spectra also confirmed the highly oriented ZnO films. Optical measurement indicated that transmittance of the films was above %85, and the optical band gap slightly decreased with the increasing annealing temperature from 350 to 550 °C. Morphological analysis displayed that increasing annealing temperature improved surface morphology and enlarged the grain size from 2-3 nm for as-deposited samples to 150 nm for annealed at 550 °C.

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Growth, structural and optical properties of ZnO-ZnMgO-MgO nanocomposites and their photocatalytic activity under sunlight irradiation

Cited by 48 publications

References 45 publications

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

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Growth, structural and optical properties of ZnO-ZnMgO-MgO nanocomposites and their photocatalytic activity under sunlight irradiation

Cited by 48 publications

References 45 publications

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI2Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer

Highly c-axis Oriented ZnO Thin Films by Sol-gel Method

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Simultaneous Improved Performance and Thermal Stability of Planar Metal Ion Incorporated CsPbI₂Br All‐Inorganic Perovskite Solar Cells Based on MgZnO Nanocrystalline Electron Transporting Layer