Growth Rate and Crystallinity of Nanocrystalline Silicon Film Grown by Electron Beam Excited Plasma Chemical Vapor Deposition

Abstract

Using electron beam excited plasma chemical vapor deposition, nanocrystalline Si films can be grown without H 2 dilution. This paper describes the effects of growth parameters on the growth rate and the crystallinity of Si films.

Improvement of Compact Electron-Beam-Excited Plasma Source for Increased Producible Plasma Density

“…This excellent property makes the EBEP source extremely versatile. Its applications include Ar þ lasers, 3) ion sources, 1) etching, [4][5][6] chemical vapor deposition (CVD), [7][8][9][10][11] physical vapor deposition (PVD), 12,13) and surface treatment/cleaning. 14,15) Recently, EBEP sources have been actively researched for nitriding, [16][17][18][19][20] one of the surface-hardening heat treatments of metals.…”