2017
DOI: 10.1016/j.diamond.2016.11.018
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Growth processes of nanocrystalline diamond films in microwave cavity and distributed antenna array systems: A comparative study

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Cited by 12 publications
(8 citation statements)
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“…Since the accurateness of the thickness measurement was estimated at ±10%, the growth rate remains roughly constant as a function of the deposition time. Samples of series S grown during 2 h have a growth rate, and, therefore, a film thickness, which increase when the substrate temperature varies from 265 to 400 • C. This behavior is comparable to the one reported for the DAA microwave system when using conventional substrates such as silicon in similar growth conditions [39]. The growth rate thus increases from 39.5 nm•h −1 to 55 nm•h −1 leading to a thickness variation from 79 to 110 nm.…”
Section: Resultssupporting
confidence: 79%
“…Since the accurateness of the thickness measurement was estimated at ±10%, the growth rate remains roughly constant as a function of the deposition time. Samples of series S grown during 2 h have a growth rate, and, therefore, a film thickness, which increase when the substrate temperature varies from 265 to 400 • C. This behavior is comparable to the one reported for the DAA microwave system when using conventional substrates such as silicon in similar growth conditions [39]. The growth rate thus increases from 39.5 nm•h −1 to 55 nm•h −1 leading to a thickness variation from 79 to 110 nm.…”
Section: Resultssupporting
confidence: 79%
“…The total current density J is the sum of the displacement current density J d and the plasma current density J p . The latter can be approximated in the microwave time scale by the electron current density J p = −en e v e (6) neglecting the slow motion of ions. Here, e, n e and v e denote the charge, density and mean velocity of electrons, respectively.…”
Section: Static Magnetic and Microwave Fieldsmentioning
confidence: 99%
“…Low pressure hydrogen plasmas are of great interest to a plethora of industrial sectors including multiple stages of semiconductor fabrication [1][2][3][4], diamond-like carbon film manufacturing [5,6], and for their usage as a hydrogen radical source [7]. Equally, the interaction between a hydrogen plasma and a surface is of prominent importance in a number of academic research fields such as negative ion generation for neutral beam injection [8][9][10] and ammonia synthesis [11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…Surface-wave plasma CVD using microwaves has been suggested as an alternative to solve the abovementioned problem since it is comparatively easier to form a large-area film [21]. The development of an advanced CVD method for large-area diamond synthesis has, however, been challenging [22,23]. Although considerable research on the synthesis of large-area diamonds has been conducted, diamond crystallinity and deposition rate still require improvement.…”
Section: Introductionmentioning
confidence: 99%