2001
DOI: 10.1063/1.1410322
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Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition

Abstract: The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C 2 H 2 :NH 3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our results indica… Show more

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Cited by 991 publications
(668 citation statements)
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“…Upon annealing to the growth temperature in the range 500 to 700 -C, under H 2 flow, with the help of the thermally activated HWCVD process (W filament heated at 1800 -C), the nickel thin film was found to break up into nanoparticles which seed the growth of the MWCNTs. Owing to the studies of other groups [5,7,9], it has been shown that the thickness of the initial Ni thin film and the growth temperature determine the size and density of the nanoparticles formed after annealing, and hence control the diameter and density of the nanotubes. After reaching the working temperature, the nanotube growth was initiated by introducing NH 3 and C 2 H 2 into the chamber and igniting the glow discharge plasma using a 1 kW dc generator between the anode and the heated substrate-holder, the distance between these electrodes being 8 mm.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Upon annealing to the growth temperature in the range 500 to 700 -C, under H 2 flow, with the help of the thermally activated HWCVD process (W filament heated at 1800 -C), the nickel thin film was found to break up into nanoparticles which seed the growth of the MWCNTs. Owing to the studies of other groups [5,7,9], it has been shown that the thickness of the initial Ni thin film and the growth temperature determine the size and density of the nanoparticles formed after annealing, and hence control the diameter and density of the nanotubes. After reaching the working temperature, the nanotube growth was initiated by introducing NH 3 and C 2 H 2 into the chamber and igniting the glow discharge plasma using a 1 kW dc generator between the anode and the heated substrate-holder, the distance between these electrodes being 8 mm.…”
Section: Methodsmentioning
confidence: 99%
“…Thus, the hightemperature methods have been replaced by several lowtemperature chemical vapor deposition (CVD) techniques (< 800 -C), which are most promising in terms of CNT deterministic growth. These techniques include thermal CVD [4,5], direct current (dc) plasma-enhanced CVD (dc PECVD) [6,7], microwave PECVD [8 -10], hot-wire (HW) dc PECVD [11 -13], and HWCVD [14 -16]. In all these techniques, substrates (c-Si or SiO 2 coated c-Si) were coated with a suitable transition metal catalyst, primarily Fe, Co or Ni.…”
Section: Introductionmentioning
confidence: 99%
“…19,20 Both product yield and the properties of CNTs are basically determined by the raw materials, for example, CNT production has been investigated from laser ablation, plasma assisted deposition, pyrolysis or chemical vapour deposition. 21,22 However, only limited information is available about the pyrolysis of real-world waste plastics for CNT production.…”
Section: Introductionmentioning
confidence: 99%
“…The the nanopores [11], [12]. RIE [10], [13], [15] can reliably and selectively remove the junk carbon layer, but it may take up to 5 hours. Besides, RIE requires rather expensive equipment and sophisticated maintenance, thus is less available outside of large research universities and laboratories.…”
Section: Methodsmentioning
confidence: 99%
“…Numerous attempts, such as air oxidation and reactive ion etching (RIE) [10]- [15] were studied for this purpose. However, each of these methods has their own pros and cons.…”
mentioning
confidence: 99%