Growth pressure dependence of neighboring mask interference in densely arrayed narrow-stripe selective MOVPE for integrated photonic devices

Mask interference effect in a densely arrayed waveguide fabricated by using narrow-stripe selective MOVPE

“…4. This is based on our reported method [4], which was used to simulate only the PL-wavelength distribution. For a given waveguide, both the corresponding and neighboring masks, separated by mask spacing W s ; can be regarded as a single effective mask by applying the following relationship,…”

“…Consequently, the waveguide characteristics, such as layer thickness and bandgap energy, are affected by several mask stripes. We call this effect the mask interference effect [4]. Further decrease in the spacing Ls results in no surface area exposed between the waveguides (Fig.…”

“…In typical MASE, the overall distribution of photoluminescence(PL)-wavelength in the arrayed waveguide is controlled by the outermost mask width W m;out : To fabricate the designed arrayed waveguides accurately, we need to precisely control mask interference. We previously reported a dependence of the mask interference effect on the growth pressure in narrow-stripe selective MOVPE [4]. We simulated the PL-wavelength distributions of microarray waveguides using a newly introduced mask interference constant.…”

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

“…However, one major difficulty in fabricating monolithic integrated devices is to obtain large bandgap energy shift between the functional elements. More recently, a novel integration method for bandgap energy controlling during simultaneous selective area growth (SAG) process in metal-organic chemical vapor deposition (MOCVD) has received great attention [3][4][5]. Different bandgaps of MQW structures can be easily achieved in a substrate simultaneously by changing the dielectric mask geometry.…”

The effect of reactor pressure on selective area epitaxy of GaAs in a close-coupled showerhead reactor

“…The pressure range under investigation is typically limited to small excursions (o100 Torr) in the low-pressure MOVPE regime [7,8]. In different studies, a completely different reactor was used to compare low pressure to atmospheric pressure results [9,10]. Using a CCS reactor, it is possible to vary the reactor pressure over a much larger range than traditional reactor geometries, and still retain acceptable uniformity.…”