High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

Selective-area MOVPE growth for 10Gbit/s electroabsorption modulator integrated with a tunable DBR laser

“…To fabricate monolithic integrated devices, it is necessary to obtain large bandgap energy shift between the functional elements. Selective area growth (SAG) is an important technique for monolithic integration of photonic devices in III-V compound semiconductor [3,4]. The SAG using metalorganic vapor phase epitaxy (MOVPE) can realize bandgap engineering on a single wafer due to the growth rate enhancement and composition variation from the difference of vapor phase diffusion length and surface migration length of group III species by changing the dielectric mask geometry [5].…”