Growth parameter optimization for fast quantum dot SESAMs

Maas, D. J. H. C.; Bellancourt, A.-R.; Hoffmann, Martin; Rudin, B.; Barbarin, Y.; Golling, Matthias; Südmeyer, Thomas; Keller, U.

doi:10.1364/oe.16.018646

Cited by 106 publications

(57 citation statements)

References 34 publications

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“…As shown in Fig. 3, pump-probe measurements of the recovery dynamics of a SESAM show two clearly distinguishable recovery processes, which can be fitted well with a double exponential fit with two time constants [37]:…”

Section: Sesammentioning

confidence: 57%

Experimentally verified pulse formation model for high-power femtosecond VECSELs

et al. 2013

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Optically pumped vertical-external-cavity surface-emitting lasers (OP-VECSELs), passively modelocked with a semiconductor saturable absorber mirror (SESAM), have generated the highest average output power from any sub-picosecond semiconductor laser. Many applications, including frequency comb synthesis and coherent supercontinuum generation, require pulses in the sub-300-fs regime. A quantitative understanding of the pulse formation mechanism is required in order to reach this regime while maintaining stable, high-average-power performance. We present a numerical model with which we have obtained excellent quantitative agreement with two recent experiments in the femtosecond regime, and we have been able to correctly predict both the observed pulse duration and the output power for the first time. Our numerical model not only confirms the soliton-like pulse formation in the femtosecond regime, but also allows us to develop several clear guidelines to scale the performance toward shorter pulses and higher average output power. In particular, we show that a key VECSEL design parameter is a high gain saturation fluence. By optimizing this parameter, 200-fs pulses with an average output power of more than 1 W should be possible.

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Section: Sesammentioning

confidence: 57%

Experimentally verified pulse formation model for high-power femtosecond VECSELs

et al. 2013

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“…In contrast with a MIXSEL [4,8] we combine gain and absorber in one semiconductor element and obtain modelocking in a simple linear cavity. Since the first MIXSEL demonstration with an average power of 40 mW in 2007 [4], the MIXSEL was improved with optimised low saturationfluence quantum dot (QD) saturable absorbers [9],an antiresonant design [5], and an improved thermal management by directly soldering the MIXSEL semiconductor chip onto a CVD (chemi-cal vapour deposition) diamond heat spreader with subsequent removal of the GaAs wafer. This enabled an average output power of 6.4 W in 28 ps pulses at 2.5 GHz repetition rate [5].…”

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confidence: 99%

“…The saturable absorber was characterised inside the MIXSEL structure at room temperature where the quantum well gain is detuned to about 940 nm and does not contribute to the absorption. We used the same setups and data evaluation as described in [9].…”

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confidence: 99%

High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation

Wittwer

Mangold

Hoffmann

et al. 2012

Electronics Letters

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Presented is an optically pumped modelocked integrated externalcavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.Introduction: Compact high-power ultrafast lasers with pulse repetition rates of several gigahertz are of great interest for many applications, such as optical clocking, optical interconnects or optical sampling. VECSELs (vertical external cavity surface emitting lasers), modelocked with SESAMs (semiconductor saturable absorber mirrors), achieve excellent beam quality and high average output power at high repetition rates [1].To date, SESAM modelocked VECSELs have achieved Watt-level operation in the femtosecond regime: 5.1 W of average output power with 682 fs pulses [2] and more than 1 W of average output power with 784 fs pulses in a configuration with a similar mode size on the VECSEL and the SESAM [3], which is crucial for vertical absorber integration within an antiresonant modelocked integrated external-cavity surface emitting laser (MIXSEL) structure [4,5]. At a repetition rate of 10 GHz, fundamental modelocking was demonstrated with a pulse duration as short as 486 fs but at an average power of only 30 mW [6]. Higher average output power up to 1.4 W was only achieved with longer picosecond pulses [1]. Further scaling of the repetition rate beyond 10 GHz resulted in fundamental modelocking at a repetition rate of 50 GHz with 102 mW in 3.3 ps pulses [1]. In harmonic modelocking repetition rates up to 175 GHz with 300 mW in 400 fs pulses [7] were demonstrated.SESAM modelocked VECSELs require a more complex cavity design with two separate semiconductor elements in a folded cavity. In contrast with a MIXSEL [4,8] we combine gain and absorber in one semiconductor element and obtain modelocking in a simple linear cavity. Since the first MIXSEL demonstration with an average power of 40 mW in 2007 [4], the MIXSEL was improved with optimised low saturationfluence quantum dot (QD) saturable absorbers [9],an antiresonant design [5], and an improved thermal management by directly soldering the MIXSEL semiconductor chip onto a CVD (chemi-cal vapour deposition) diamond heat spreader with subsequent removal of the GaAs wafer. This enabled an average output power of 6.4 W in 28 ps pulses at 2.5 GHz repetition rate [5]. However, similar to the first MIXSEL result, the pulse repetition rate was limited to the few giga-hertz regime and the pulse duration to the multi-10 ps regime.Here, we present 10 GHz operation of a MIXSEL, achieving 2.4 W average output power in 17 ps pulses. Furthermore, we present the macro-scopic characterisation of the...

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“…1 Application areas where QD based structures have outperformed their bulk and quantum well counterparts include monolithic passive 2 and active 3 mode locked lasers (MMLs), electrooptic modulators, 4 and saturable absorber mirrors. 5 Characteristics such as reduced sensitivity to optical feedback and reduced alpha-parameter have made such materials attractive as laser sources. 6 However, at the technologically important 1.3 lm wavelength, good modulation performance has been difficult to realise due to the significant amount of "hot carriers" present in the system.…”

mentioning

confidence: 99%

Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

Pulka

Piwoński

Huyet

et al. 2012

Applied Physics Letters

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The ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, ground state wavelengths exhibit full gain recovery in less than 10 ps up to 3 times transparency, attributed to enhanced carrier refilling via the injector layer. The effect of the injector can also been seen in unusual phase dynamics at excited state wavelengths at this injection level.

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Growth parameter optimization for fast quantum dot SESAMs

Cited by 106 publications

References 34 publications

Experimentally verified pulse formation model for high-power femtosecond VECSELs

Experimentally verified pulse formation model for high-power femtosecond VECSELs

High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation

Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

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