Growth of ZnSe and ZnCdSe on (2 1 1)B GaAs substrates

Telfer, S. A.; Horsburgh, G.; Milnes, J.; Morhain, C.; Thompson, P.; Prior, K. A.; Cavenett, B.C.

doi:10.1016/s0022-0248(98)80292-3

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Rheed Analysis Of (211)b Hgcdte2

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Cited by 6 publications

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“…2. 18,20 Thus, the surface is an upward periodic step array with (111) terraces. From the previous section, the RHEED pattern viewed along the [0,1,-1] should exhibit splitting of the RHEED steaks into slashes, as schematically represented in Fig.…”

Section: Rheed Analysis Of (211)b Hgcdtementioning

confidence: 99%

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Surface structure of plasma-etched (211)B HgCdTe

Benson

Stoltz

Varesi

et al. 2005

Journal of Elec Materi

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The surface of (211)B HgCdTe has been studied by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM). RHEED analysis of the as-grown Hg-rich molecular beam epitaxy (MBE) (211)B HgCdTe suggests the surface reconstructs by additional Hg incorporation. The plasma-etched (211)B HgCdTe surface is crystalline but stepped and facetted. RHEED analysis indicates asymmetric pyramids (base dimensions Ϸ 0.5 ϫ 1.1 nm) are formed to minimize surface Hg concentration. The AFM examination of plasma-etched (211)B HgCdTe reveals oriented mesoscopic features.

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Section: Rheed Analysis Of (211)b Hgcdtementioning

confidence: 99%

“…23,24 A similar model has been proposed for faceted (211)B GaAs 16 and ZnSe. 18 In this model, surface Hg concentration is minimized. In a previous study, Auger electron spectroscopy determined Hg was preferentially depleted from an ECR plasma-etched HgCdTe surface.…”

Section: Rheed Analysis Of (211)b Hgcdtementioning

confidence: 99%