Growth of ZnO on Sapphire (0001) by the Vapor Phase Epitaxy Using a Chloride Source

Abstract

Simple algorithms, which are based on the principle of factorisation of an integer, are proposed to generate the polynomial zeros of degree 2 of the 3-j and 6-j coefficients.

Preparation and properties of ZnO and devices

“…Early growth experiments with magnetron sputtering [39,41], and chemical vapor deposition (CVD) [42][43][44] led to polycrystalline films. Later attempts led to high quality ZnO single-crystal films prepared by RF magnetron sputtering [45] and methods such as molecular beam expitaxy (MBE) [46,47], pulsed laser deposition (PLD) [48], metal-organic CVD (MOCVD) [49], and hydride or halide vapor phase epitaxy (HVPE) [50,51]. The improved quality of ZnO films allowed observation of optically pumped lasing at room temperature [52].…”

“…In addition to the variety relying on metalorganic sources, there is also the hydride or halide precursor variety called hydride or halide CVD or VPE [66,67]. ZnO films have also been grown by halide VPE employing oxygen gas and Zn chloride (ZnCl 2 ) [68] or Zn iodide (ZnI 2 ) [69] as sources of O and Zn, respectively.…”

Step-flow growth of homoepitaxial ZnO thin layers by halide vapor phase epitaxy using ZnCl2 and H2O source gases

“…Single crystal ZnO has been grown using several methods, such as molecular beam epitaxy (MBE) [3,4], pulsed laser deposition (PLD) [5], metalorganic vapor phase epitaxy (MOVPE) [6], and chloride source vapor phase epitaxy (VPE) [7]. After the achievement of high quality bulk ZnO substrates by the hydrothermal method [8], several attempts have been made to grow high quality homoepitaxial ZnO layers by various growth methods such as plasmaassisted MBE [9,10], PLD [11], and MOVPE [12].…”

“…Since high purity ZnCl 2 gas generated by the chemical reaction between Zn metal and Cl 2 gas at the source zone in the reactor can be used (rather than by evaporation of ZnCl 2 powder as in Refs. [7,17]) and ZnCl 2 has a high sticking coefficient to the growing surface, high purity ZnO growth is possible even at 1000 1C by the HVPE.…”

COMPUTER SIMULATION OF ZnO FIELD-EFFECT TRANSISTOR FOR HIGH-POWER AND HIGH-TEMPERATURE APPLICATIONS USING THE MONTE CARLO METHOD

“…Recently, however, large area bulk growth has been achieved, 1 and, furthermore, several epitaxial methods have produced excellent material. [2][3][4][5][6][7][8][9][10] Also, quantum wells have been successfully grown, by alloying with Mg or Cd. 11 Thus, ZnO is now being proposed for the same applications as those listed above for GaN and SiC.…”