Growth of ZnO nanorods on various substrates by electrodeposition

Kim, Hyung-Hoon; Moon, Jung-Eun; Lee, Ho Seong

doi:10.3365/eml.2009.09.135

Cited by 42 publications

(17 citation statements)

References 21 publications

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“…The apparatus used in this study was explained elsewhere [21]. Indium-tin-oxide (ITO) glass with sheet resistance of 10 X/square and Pt foil were used as a working electrode and a counter electrode, respectively.…”

Section: Methodsmentioning

confidence: 99%

“…Through this process, HMTA provides continuously OH À necessary for the formation of Zn(OH) 2 , which subsequently forms ZnO [22]. n-ZnO nanorods was electrodeposited at 70°C for 90 min, and then annealed in air ambient for 300°C for 1 h. The detailed growth condition for ZnO nanorods can be found in the literature [21]. For a p-Cu 2 O/n-ZnO heterojunction, Cu 2 O films were grown on n-ZnO nanorods at various temperatures of 80-100°C for 60 min by using above described method.…”

Section: Methodsmentioning

confidence: 99%

“…p-Cu 2 O/n-ZnO heterojunction can be grown by using a two-step electrodeposition method [5,6]. The quality of films grown by electrodeposition is strongly dependent upon substrate, temperature of electrolyte, pH, bubbling, and concentration of solute [17][18][19][20][21]. Until now, most Cu 2 O thin films have been grown by using mainly galvanostatic method [6,10].…”

Section: Introductionmentioning

confidence: 99%

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Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Jeong

Kim

Lee

2013

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Jeong

Kim

Lee

2013

Journal of Alloys and Compounds

Self Cite

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“…Since the vapor-liquid-solid (VLS) mechanism was proposed in 1964 as an explanation for silicon (Si) whisker formation, various types of nanowires have been extensively developed [1][2][3][4][5][6][7][8][9]. In particular, the growth of groups III-VI semiconductor nanowires, such as GaAs [10,11] and InAs [12,13] nanowires, has attracted considerable interest in order to exploit their unique electrical and optical properties due to diameter-dependent quantum confinement.…”

Section: Introductionmentioning

confidence: 99%

Growth of single crystal GaAs nanowires by a surface diffusion-mediated solid-liquid-solid process

et al. 2012

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A facile route to synthesize GaAs nanowires by simply heating Au-coated GaAs substrates to 700°C under vacuum (~10 −3 Torr) was developed in this study. Detailed structural analyses showed that ultrathin single crystal GaAs nanowires with an average diameter of ~15 nm were grown outward from the Au metal droplets remaining on the surface of the GaAs substrate. On the other hand, the substrate surface region contacting the metal layer became porous, and the depth of the porous layer increased with increasing processing time. Based on these results, it was concluded that the nanowires were grown by a solidliquid-solid process involving the surface diffusion of adatoms from the underlying solid substrates to the Au liquid droplets.

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“…A tremendous amount of effort has been made in the growth of a variety of nanostructures for nanodevice applications [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Among them, the nanowire, which is a onedimensional nanostructure form, has received considerable attention.…”

Section: Introductionmentioning

confidence: 99%

Annealing-induced enhancement of ferromagnetism in SnO2-core/Cu-shell coaxial nanowires

Kim

Yang

et al. 2011

Met. Mater. Int.

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In this study, we have coated tin oxide (SnO2) nanowires with a Cu shell layer via the sputtering method and subsequently investigated the effects of thermal annealing. The annealing-induced changes in morphologies, microstructures, and compositions of the resulting core-shell nanowires were characterized by using scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and energydispersive X-ray spectroscopy (EDX). The Cu shell layers were agglomerated to form clusters, which were mainly comprised of the Cu2O phase. For the first time, a hysteresis loop indicating weak ferromagnetism was observed from the pure SnO2 nanowires. Both the coercivity and the retentivity in the hysteresis loop were slightly increased by Cu-sputtering, indicating a very slight enhancement of ferromagnetism. Also, the ferromagnetic behavior was significantly enhanced by thermal annealing. We discuss the possible mechanisms of annealing-induced enhancement of ferromagnetism in the SiO 2 /Cu core-shell nanowires, which include the generation of Cu 2 O phase, Cu-doping into the SnO 2 lattice, and the generation of oxygen vacancies in SnO 2 core nanowires.

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Growth of ZnO nanorods on various substrates by electrodeposition

Cited by 42 publications

References 21 publications

Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Growth and characterization of p-Cu2O/n-ZnO nanorod heterojunctions prepared by a two-step potentiostatic method

Growth of single crystal GaAs nanowires by a surface diffusion-mediated solid-liquid-solid process

Annealing-induced enhancement of ferromagnetism in SnO2-core/Cu-shell coaxial nanowires

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