“…At a substrate temperature of 240 1C we have grown alloys with a maximum x¼ 0.12 [18]. At 150 1C similar Mg and Zn fluxes give x¼ 0.8 [32] and it is also possible to grow ZnS at useful growth rates solely by evaporating ZnS from a Knudsen source, which is not possible at 240 1C.…”
Section: Zn and Mg Incorporation Coefficientsmentioning
“…At a substrate temperature of 240 1C we have grown alloys with a maximum x¼ 0.12 [18]. At 150 1C similar Mg and Zn fluxes give x¼ 0.8 [32] and it is also possible to grow ZnS at useful growth rates solely by evaporating ZnS from a Knudsen source, which is not possible at 240 1C.…”
Section: Zn and Mg Incorporation Coefficientsmentioning
“…2 The residual Zn level would be expected, on thermodynamic grounds, to decrease with increasing growth temperature, and this is confirmed by the growth by the Heriot-Watt MBE group of high Zn mole fraction ZnMgS alloys which require far lower growth temperatures. 30 The SIMS and Auger values can therefore be considered as upper bounds on the Zn mole fraction in the material examined in the present study and these values will be a reference data in the course of the following X-ray experimental analysis.…”
MgS/ZnSe/GaAs multilayers with the MgS thickness ranging from 20 to 140 nm were grown at 300 °C by molecular beam epitaxy on [001] GaAs substrates. The samples were studied by using several X-ray methods and transmission electron microscopy. The coexistence of metastable zinc-blende (ZB) and rock-salt (RS) MgS structural phases were evidenced and discussed. The analysis of reciprocal space maps of the x-ray intensity distribution around asymmetrical reciprocal lattice nodes allowed us to determine the strain status of the MgS layers and to show that the ZB-MgS phase were pseudomorphic in also the case of the thickest film. The lattice parameter of the pure ΖΒ-MgS phase ranging between 0.56333< a MgS <0.56367 nm was obtained by extrapolation from X-ray diffraction data and
“…During the growth of the ZnMgS layers only ZnS and Mg fluxes were used; there was no other source of sulphur. 4 Typical cell temperatures were 770°C for ZnS and 270°-290°C for Mg.…”
Section: Growth Photoluminescence and X Raymentioning
The excitonic properties of cubic ZnS quantum wells in ZnMgS are studied by reflectivity and magnetooptics. A remarkable improvement in the quality of the samples grown by molecular-beam epitaxy on GaP substrates has allowed the observation of heavy-and light-hole exciton transitions with values for the full width at half maximum as narrow as 5 meV. The 2s state of the heavy-hole exciton is identified and exciton binding energies of as high as 55 meV are deduced, indicating that for quantum wells narrower than 3.5 nm the exciton-LO phonon scattering can be suppressed. Zeeman splittings of the order of 10 meV for both the lightand heavy-hole exciton transitions appear in magnetoreflectivity spectra in magnetic fields up to 54 T. Large light-hole exciton g values of the order of 4 for all quantum wells are obtained due to the light hole being the uppermost valence band in these tensile-strained quantum wells. A strong reduction in the diamagnetic shifts for narrow wells is observed due to increasing quantum confinement.
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