Growth of zinc selenide single crystal by the modified Piper and Polich sublimation method

Lee, H.; Kim, T.S.; Jeong, T. S.; An, Hea-Ja; Kim, J.Y.; Youn, C. J.; Yu, P. Y.; Hong, Kwangjoon; Lee, H.J.; Shin, Yu-Ju

doi:10.1016/s0022-0248(98)00035-9

Cited by 10 publications

(1 citation statement)

References 13 publications

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“…A seed is placed below at a definite distance from the chamber on the center of a sapphire or quartz pedestal. Like in the ZnTe case, ZnSe single crystals with rocking-curve full width half maximum (FWHM) as low as 20 arcsec have been grown by sublimation THM [80][81][82], at source temperatures ranging from 900 to ~1155˚C, ∆T of 5-35˚C, and pulling rates ranging from 0.04 to 0.26 mm/h depending on the growth temperature. H 2 or its mixture with Ar is used as residual atmosphere in sealed ampoules, or He with the cold end of the ampoule connected to a He reservoir for gas refeeding.…”

Section: Znsementioning

confidence: 99%

Growth of Zinc Chalcogenides

Triboulet

2003

Crystal Growth Technology

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Section: Znsementioning

confidence: 99%

Growth of Zinc Chalcogenides

Triboulet

2003

Crystal Growth Technology

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Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire

Zhi

Tisch

Zamir

et al. 2000

J. Electron. Mater.

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Thin GaN films, grown by metal organic chemical vapor deposition on the basal plane of sapphire substrates, were characterized by x-ray pole figures, highresolution x-ray diffraction and transmission electron microscopy. This combination was found sensitive to small amounts (down to 0.1%) of cubic GaN phase in specimens subjected to surface nitridation treatment prior to epitaxial growth. The presence of the cubic phase and its orientation relations to the hexagonal GaN matrix was established by means of pole figures and selected area electron diffraction. The amount of cubic phase was determined by comparing the integrated x-ray diffraction intensities of the (311) cubic GaN and the (11.2) hexagonal GaN reflections. Optimum nitridation duration was found, which corresponds to almost complete suppression of the cubic phase formation.

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Contactless growth of ZnSe single crystals by physical vapor transport

George

Pałosz

et al. 2000

Journal of Crystal Growth

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2S/^11ZCZnSe crystals were grown by self-seeded physical vapor transport (PVT) technique in the horizontal configuration. The source materials were heat treated by H 2 reduction to remove the oxide followed by baking under dynamic vacuum to adjust the source composition toward that of congruent sublimation. Contactless growth of ZnSe single crystals have been performed consistently using three different source materials. The crystals grew away from the wall during the later stage of the growth with large (110) facets tend to align parallel to the gravity direction. The SEM micrographs and the ATM images showed that large (110) terraces and steps dominate the as-grown facets. The measured residual gas pressures in the processed ampoules agree well among various source materials and the major components were CO and H 2 . No preferred growth direction was found. The one-dimensional diffusion model on the mass flux of a multi-species PVT system was employed to analyze the conditions for contactless growth. The calculated thermal profile for supersaturation is very close to the thermal profile measured inside the empty furnace bore in the region of contactless growth. The effects of convective flows in the vapor phase inside the ampoule on the growth processes are discussed.

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Growth of zinc selenide single crystal by the modified Piper and Polich sublimation method

Cited by 10 publications

References 13 publications

Growth of Zinc Chalcogenides

Growth of Zinc Chalcogenides

Quantitative analysis of small amounts of cubic GaN phase in GaN films grown on sapphire

Contactless growth of ZnSe single crystals by physical vapor transport

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