Growth of ‘W’ doped molybdenum disulfide on graphene transferred molybdenum substrate

Abstract

In the present study, a novel method has been carried out to grow tungsten (W) doped molybdenum disulfide (MoS2) on the graphene transferred TEM grid in a chemical vapor deposition (CVD) setup. Tungsten trioxide (WO3) has been used as a source for ‘W’ while ‘Mo’ has been derived from Mo based substrate. Different experimental parameters were used in this experiment. Higher gas flow rate decreases the size of the sample flake and on other side increases the dopant concentrations. The interaction mechanism between Mo, S, W and oxygen (O) have been explored. The influence of oxygen seems to be not avoidable completely which also imposes effective growth condition for the reaction of Mo with incoming sulfur atoms. The difference in the migration energies of Mo, WO3, S clusters on the graphene and the higher reactivity of Mo clusters over other possibly formed atomic clusters on the graphene leads to the growth of W doped MoS2 monolayers. Formation of MoS2 monolayer and the nature of edge doping of ‘W’ is explained well with the crystal model using underlying nucleation principles. We believe our result provide a special route to prepare W doped MoS2 on graphene substrate in the future.

Wearable Sensors Based on Atomically Thin P‐Type Semiconductors

“…Beyond those conventional non-isoelectronic doping, isoelectronic substitution doping is also achieved in 2D materials, such as Se-doped MoS 2 [176] and W-doped MoS 2 . [177] A large portion of substitutional doping for 2D materials is performed during the in situ growth. [178][179][180] For example, Li et al [178] demonstrated p-type large-area monolayer Nb-doped MoS 2 by a one-step salt-assisted CVD process.…”

“…Beyond those conventional non‐isoelectronic doping, isoelectronic substitution doping is also achieved in 2D materials, such as Se‐doped MoS 2 [ 176 ] and W‐doped MoS 2 . [ 177 ]…”

Modulation of electronic and thermal proprieties of TaMoS$_2$ by controlling the repulsive interaction between Ta dopant atoms

“…Two-dimensional (2D) transition metal dichalcogenides (TMDs) materials are attracting a significant deal of interest due to their unique properties and great potential for applications in nanotechnology [1,2,3]. Among all 2D TMDs, Molybdenum disulfide (MoS 2 ) has turned out to be one of the most interesting materials for applications due to a series of special and tunable physical and chemical properties [4,5,6] in various fields with potential as field-effect transistors [7], solar energy devices [8], energy conversion [9] and energy storage devices [10], photoluminescence [11], catalysis for hydrogen evolution reaction [12], piezoelectric devices [13], photo-electro catalysis [14,15] electrical-thermal conductivity [16,17] and sensor technologies [18,19].…”