Growth of vanadium oxide films on InP under mild conditions and thermal oxidation of the resultant structures

Сладкопевцев, Б. В.; Mittova, I. Ya.; Томина, Е. В.; Burtseva, N.A.

doi:10.1134/s0020168512020173

Cited by 10 publications

(16 citation statements)

References 9 publications

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“…5 was due to the fact that the film formed as a result of thermal oxidation does not prevent the evaporation of volatile component. In this case, a correlation with the Auger electron spectroscopy (AES) data [8] was observed, which indicate a very low amount of phosphorus on the surface of the film and in the volume. In samples formed by EEC (for example, no.…”

Section: −supporting

confidence: 53%

“…The second method consisted of using a vanadium pentoxide gel and precipitation of it from the aerosol phase using a compressor disperser, using a detailed previously-described synthetic procedure is described in the study [8]. The freshly prepared V 2 O 5 gel was precipitated for 3 min onto a cooled InP substrate.…”

Section: Methodsmentioning

confidence: 99%

“…2(c,d), Table 2). The synthesis of the vanadium pentoxide gel, its further precipitation from the aerosol and annealing in air lead to the presence of vanadium in the form of a number of oxides, e. g. films had a complex composition already before oxidation [8], depending on the type of annealing (fast high-energy pulsed photon annealing or long term thermal). The quantitative and qualitative ratio of vanadium oxides was also determined by the duration of annealing in an oxidizing or reducing atmosphere [9].…”

Section: −mentioning

confidence: 99%

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The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Sladkopevtcev¹,

Золотухина²,

Томина³

et al. 2017

Nanosystems: Phys. Chem. Math.

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The dependence of oxide films surface layers' compositions on the method of depositing of V 2 O 5 on InP and regimes of thermal oxidation of the formed heterostructures was established by the XPS method. Lower indium content near the surface for all samples in comparison with the standard indicates a partial blocking of its diffusion into films during the chemostimulated thermal oxidation of the semiconductor. The presence of vanadium oxides in certain oxidation states and their ratio depends on the method of deposition for the chemostimulator, and on the regime of thermal oxidation. In the case of the electric arc synthesis method, at shorter reaction times, vanadium compounds in the +4 and +5 oxidation states were present in the near-surface layer, which gives evidence for the catalytic mechanism.

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Section: −supporting

confidence: 53%

Section: Methodsmentioning

confidence: 99%

Section: −mentioning

confidence: 99%

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The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Sladkopevtcev¹,

Золотухина²,

Томина³

et al. 2017

Nanosystems: Phys. Chem. Math.

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“…Magnetron sputtering was performed in a modified UVN 2M system under an oxygen-argon atmosphere, using a vanadium target (99.20% purity; target-substrate distance, 10 cm). V 2 O 5 gel was applied to the InP surface by a technique reported previously [6], through deposition on a cooled substrate over a period of 3 min. To remove chemically bound water and crystallize the chemical stimulator [7], the deposits were annealed in air at 200°C for 60 min in the same furnace as above.…”

Section: Methodsmentioning

confidence: 99%

Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5

et al. 2015

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Nanofilms have been grown on InP in the presence of V 2 O 5 introduced into the system by differ ent procedures and methods (within one procedure) and their thickness has been determined by spectral ellipsometry. The phase composition of the films has been determined by X ray diffraction, and their surface morphology and structure have been analyzed by atomic force microscopy and transmission electron micros copy. The characteristics of the films have been shown to depend on the procedure (through the gas phase in the course of oxidation or by deposition on the surface before oxidation) and method (magnetron sputtering or deposition from gel) used to introduce the chemical stimulator into the system.

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“…EXPERIMENTAL Vanadium oxide gel was synthesized according to the technique described in [6] with dispersion in a compressor dispersing agent which allows the prepara tion of an aerosol with a solution droplet size of up to 4-5 µm, and subsequent deposition from the aerosol onto InP semiconductor plates cooled using a Peltier element. The deposition time was 3 min.…”

Section: Introductionmentioning

confidence: 99%

Effect of different types of annealing on the thermal oxidation of V x O y /InP structures formed by the deposition of vanadium(V) oxide gel on the phase composition and morphology of films

Mittova

Томина

Сладкопевцев

et al. 2014

J. Synch. Investig.

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The effect of different types of annealing (thermal or pulsed photon) of V x O y /InP structures syn thesized using vanadium pentoxide gel on the process of their thermal oxidation, and the phase composition and morphology of the films are studied by the methods of X ray phase analysis (XRD), Auger electron spec troscopy (AES), and scanning tunneling microscopy (STM). Thermal annealing makes it possible to synthe size films with a smoother surface relief in the absence of film-substrate interaction before thermal oxidation. Pulsed photon treatment compared with thermal annealing leads to more effective and rapid crystallization of the amorphous phase of the V 2 O 5 gel and faster growth of oxide films during the thermal oxidation of V x O y /InP structures. As a result, pulsed photon treatment leads to the formation of InVO 4 as a product of the interaction between the semiconductor substrate and the chemostimulator, which is an attribute of the "hard" methods of chemostimulator deposition, i.e., magnetron sputtering and electric explosion of the con ductor.

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Growth of vanadium oxide films on InP under mild conditions and thermal oxidation of the resultant structures

Cited by 10 publications

References 9 publications

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

Surface morphology, composition, and structure of nanofilms grown on InP in the presence of V2O5

Effect of different types of annealing on the thermal oxidation of V x O y /InP structures formed by the deposition of vanadium(V) oxide gel on the phase composition and morphology of films

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