Effect of different types of annealing on the thermal oxidation of V x O y /InP structures formed by the deposition of vanadium(V) oxide gel on the phase composition and morphology of films

Abstract

The effect of different types of annealing (thermal or pulsed photon) of V x O y /InP structures syn thesized using vanadium pentoxide gel on the process of their thermal oxidation, and the phase composition and morphology of the films are studied by the methods of X ray phase analysis (XRD), Auger electron spec troscopy (AES), and scanning tunneling microscopy (STM). Thermal annealing makes it possible to synthe size films with a smoother surface relief in the absence of film-substrate interaction before thermal oxidation. Pulsed photon treatment compared with thermal annealing leads to more effective and rapid crystallization of the amorphous phase of the V 2 O 5 gel and faster growth of oxide films during the thermal oxidation of V x O y /InP structures. As a result, pulsed photon treatment leads to the formation of InVO 4 as a product of the interaction between the semiconductor substrate and the chemostimulator, which is an attribute of the "hard" methods of chemostimulator deposition, i.e., magnetron sputtering and electric explosion of the con ductor.

The XPS investigations of the surface composition of nanoscale films formed by thermal oxidation of VxOy/InP heterostructures

“…At the same time, layers of nanometer thickness range (20-25 nm) were formed on the semiconductor surface. The specific use of vanadium pentoxide gel leads to a complication in the composition of the layers deposited, vanadium oxides of varying oxidation states are present in them even before the start of the thermal oxidation process (X-ray phase analysis data [XRD] [9]). The composition is also affected by the annealing parameters; therefore, the corresponding thin-film heterostructures were subsequently labeled as V x O y /InP.…”

“…The synthesis of the vanadium pentoxide gel, its further precipitation from the aerosol and annealing in air lead to the presence of vanadium in the form of a number of oxides, e. g. films had a complex composition already before oxidation [8], depending on the type of annealing (fast high-energy pulsed photon annealing or long term thermal). The quantitative and qualitative ratio of vanadium oxides was also determined by the duration of annealing in an oxidizing or reducing atmosphere [9]. The low phosphorus content in the surface layer of samples no.…”

“…The presence of such peaks was established by X-ray diffraction analysis for thin-film heterostructures formed by the soft method [9]. The presence of this compound indicates the binding of vanadium, which causes the absence of its regeneration and the violation of the cyclicity of the process.…”