Growth of ultrathin silicon nitride on Si(111) at low temperatures

Bahari, Ali; Robenhagen, U.; Morgen, Per; Li, Z. S.

doi:10.1103/physrevb.72.205323

Cited by 43 publications

(26 citation statements)

References 29 publications

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“…We believe that this is a direct evidence for formation of oxynitride, and the question is, how uniform this phase is. The structure emerging at the upper valence band edge is indicative of the formation of interface states, as discussed for the growth of pure nitride films on Si surfaces, 11 and it may thus be deduced that the oxynitride phase extends all the way to the interface. This thorough mixing could be due at least partially to an open grain structure of the nitride.…”

Section: Experimental Details and Resultsmentioning

confidence: 97%

“…The other issue is an assumed poor quality of the interface between silicon nitride and Si ͑100͒, 9,10 which we actually also found to be definitely poorer than for Si ͑111͒. 2, 3 We do believe, however, that with our most recent procedures, 2,3,11 the quality of the bulk, and of the interfaces of suitably, low-temperature grown Si 3 N 4 or oxynitride, in the form of ultrathin films, offer prospects for their use as gate dielectrics. This ought to be evaluated in devices based on our processes.…”

Section: Introductionmentioning

confidence: 90%

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Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

Bahari

Morgen

Pedersen

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have recently developed processes to grow ultrathin amorphous silicon oxide and amorphous silicon nitride layers on clean Si(111) and Si(100) surfaces exploring the self-limiting nature of the direct oxidation of Si with O2, and the self-limiting nature of the direct nitridation of Si with atomic N produced by microwave dissociation of N2, at processing temperatures around 500°C. In some of today’s microprocessor devices mixed dielectric systems are used as complementary metal oxide semiconductor gate dielectrics. We demonstrate the use of our processes to produce such systems in various structures, and with maximum control, by exposing oxide to N, or nitride to O2 at 500°C. In addition we produce a stacked layer, consisting of 7–8Å of SiO2 on top of Si(100), with a layer of varying thickness of Si3N4 grown on top of this structure. The growth of Si3N4 occurs at room temperature in this process. Such structures or thermally postprocessed structures thereof should be further examined as potential stacked gate dielectrics in the next generation of Si-based microelectronics.

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Section: Experimental Details and Resultsmentioning

confidence: 97%

Section: Introductionmentioning

confidence: 90%

Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

Bahari

Morgen

Pedersen

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…1-6 Usually, nitrogen plasma can be maintained under high-vacuumed conditions ranging from 10 −7 to 10 −3 Torr using radio frequency plasma ͑rf plasma͒ and electron-cyclotron-resonance plasma sources. [7][8][9] On the other hand, to obtain glow discharge at atmospheric pressure, it is necessary to avoid rapid amplification of the primary avalanches which initiate the arc discharge. Therefore the addition of He or other noble gases in plasma source gas is normally required.…”

Section: Introductionmentioning

confidence: 99%

The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

Nakae

Hayakawa

Yoshimura

et al. 2007

Journal of Applied Physics

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The reaction process model during initial nitridation of Si (111) using atmospheric pressure plasma source was constructed and it was compared to that using a radio frequency plasma source. In atmospheric pressure plasma, emission lines from the N2 second positive system were dominantly observed. By exposing the atmospheric pressure plasma to Si substrate at the temperature ranging from 25to500°C, silicon nitride films with a thickness below 1.8nm were formed. In order to study the nitridation process, the changes in the film thickness against the substrate temperature and nitridation time were systematically studied at a pressure ranging from 50to700Torr. The film thickness increases with increasing the nitridation pressure below 400Torr and it saturates above 500Torr. It was completely regardless of the substrate temperature. From the time dependence of the film thickness at various nitridation pressures, it was revealed that these experimental results were well fitted to a Langmuir-type adsorption model. In the case of nitridation using atmospheric pressure (AP) plasma, molecular species play an important role for nitridation without thermal diffusion. The difference of silicon nitride films fabricated using AP plasma and rf plasma originates from the difference in the active species.

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“…[2][3][4] The idea that gate leakage would significantly limit the performance of CMOS devices had induced an intense search for alternative gate dielectric materials with higher dielectric constant (high-k), which reduces some issue such as tunneling, leakage and boron diffusion through the ultra thin gate dielectric in current CMOS. [5][6][7] In addition, temperature is also a significant factor in determination of performance CMOS. SiO 2 can easily crystallize during standard CMOS operation which shows large leakage current along the grain boundaries during the processing at high temperatures (∼ 900 • C).…”

Section: Introductionmentioning

confidence: 99%

INVESTIGATION OF Zr_xLa_1-xO_y NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

Bahari

Gholipur

2012

Int. J. Mod. Phys. B

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To investigate characterization of ZrxLa 1−x Oy nanocrystallites as a buffer oxide in forming the metal-oxide-semiconductor field effect transistors (MOSFETs) structure, we synthesized ZrxLa 1−x Oy nanocrystallites by sol-gel method. Moreover, from the solution prepared, thin films on silicon wafer substrates have been realized by "dipcoating" with a pulling out speed of 5 cm min −1 . The structure, morphology, electrical properties of thin film was examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and transmission electron microscopy (TEM) techniques. Electrical property characterization was performed with metal-oxide-semiconductor (MOS) structures through capacitance-voltage (C-V) and current density-voltage (J-V) measurements. The leakage current density was below 1.0 × 10 −6 A/cm 2 at 1 MV/cm. Keywords: Nanotransistor; metal-oxide-semiconductor field effect transistors; High-k dielectric; sol-gel method. * Corresponding author. 1250191-1 Int. J. Mod. Phys. B 2012.26. Downloaded from www.worldscientific.com by GEORGE WASHINGTON UNIVERSITY on 02/03/15. For personal use only.

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Growth of ultrathin silicon nitride on Si(111) at low temperatures

Cited by 43 publications

References 29 publications

Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

INVESTIGATION OF Zr_xLa_1-xO_y NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

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Growth of ultrathin silicon nitride on Si(111) at low temperatures

Cited by 43 publications

References 29 publications

Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

Growth of a stacked silicon nitride/silicon oxide dielectric on Si(100)

The comparison of the growth models of silicon nitride ultrathin films fabricated using atmospheric pressure plasma and radio frequency plasma

INVESTIGATION OF ZrxLa1-xOy NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES

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Product

Resources

About

INVESTIGATION OF Zr_xLa_1-xO_y NANOCRYSTALLITES IN METAL–HIGH-k OXIDE–SILICON-TYPE NONVOLATILE MEMORY DEVICES