Growth of two-dimensional WS2 thin films by reactive sputtering

Villamayor, Michelle Marie S.; Lindblad, Andreas; Johansson, Fredrik; Tran, Tuan T.; Pham, Ngan Hoang; Primetzhofer, Daniel; Sorgenfrei, F.; Giangrisotomi, Erika; Föhlisch, Alexander; Lourenço, Pedro; Bernard, Romain; Witkowski, Nadine; Prévot, Geoffroy; Nyberg, Tomas

doi:10.1016/j.vacuum.2021.110205

Cited by 18 publications

(16 citation statements)

References 42 publications

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“…6). Compared with thicker films obtained using the same deposition parameters for which the S/W ratio was found equal to 1.86, 30 monolayer films are thus found to be stochiometric.…”

Section: Resultsmentioning

confidence: 66%

“…Thus it is clear that the TMDC growth is substrate dependent which was also observed previously, 55 and also depends on deposition conditions. 30…”

Section: Resultsmentioning

confidence: 99%

“…Previous attempts to sputter stoichiometric 2D WS 2 films have resulted in slightly substoichiometric films. 27–30 Stoichiometric films, as produced here, are the result of post-deposition sulfurization caused by H 2 S in the chamber during cooling of the substrate. Complete sulfurization is possible since the deposited films are extremely thin in this study.…”

Section: Discussionmentioning

confidence: 99%

“…28,29 Process parameters for growth of multilayer WS 2 films by sputtering from a WS 2 have been reported earlier by our group. 30 The sputtering technique is a versatile and promising method for cost-efficient large scale industrial production of TMDCsa scope unavailable to, e.g. the resource intensive CVD-technique.…”

Section: Introductionmentioning

confidence: 99%

“…28,29 Process parameters for growth of multilayer WS 2 films by sputtering from a WS 2 have been reported earlier by our group. 30…”

Section: Introductionmentioning

confidence: 99%

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Wafer-sized WS₂ monolayer deposition by sputtering

et al. 2022

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“…6). Compared with thicker films obtained using the same deposition parameters for which the S/W ratio was found equal to 1.86, 30 monolayer films are thus found to be stochiometric.…”

Section: Resultsmentioning

confidence: 66%

“…Thus it is clear that the TMDC growth is substrate dependent which was also observed previously, 55 and also depends on deposition conditions. 30…”

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…28,29 Process parameters for growth of multilayer WS 2 films by sputtering from a WS 2 have been reported earlier by our group. 30…”

Section: Introductionmentioning

confidence: 99%

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Wafer-sized WS₂ monolayer deposition by sputtering

et al. 2022

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NbTe₄ Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide

Chen

Kim

et al. 2023

Advanced Materials

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Abstract2D van der Waals (vdW) transition metal di‐chalcogenides (TMDs) have garnered significant attention in the nonvolatile memory field for their tunable electrical properties, scalability, and potential for phase engineering. However, their complex switching mechanism and complicated fabrication methods pose challenges for mass production. Sputtering is a promising technique for large‐area 2D vdW TMD fabrication, but the high melting point (typically Tm > 1000 °C) of TMDs requires elevated temperatures for good crystallinity. This study focuses on the low‐Tm 2D vdW TM tetra‐chalcogenides and identifies NbTe4 as a promising candidate with an ultra‐low Tm of around 447 °C (onset temperature). As‐grown NbTe4 forms an amorphous phase upon deposition that can be crystallized by annealing at temperatures above 272 °C. The simultaneous presence of a low Tm and a high crystallization temperature Tc can resolve important issues facing current phase‐change memory compounds, such as high Reset energies and poor thermal stability of the amorphous phase. Therefore, NbTe4 holds great promise as a potential solution to these issues.

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Thiourea‐Derived Single‐Source Molecular Precursor For Spin‐Coated PbS Thin Films

et al. 2023

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In search of a suitable single‐source precursor for the deposition of nanostructured PbS thin films at moderate temperatures under ambient conditions, we have synthesized the ligand N ‐(thiomorpholine‐4‐carbothioyl)benzamide and its corresponding lead(II) complex. The structures of both compounds were determined by single‐crystal X‐ray diffraction. In the complex, two ligands coordinate to a lead(II) atom in hemi‐directed geometry through S and O atoms. Secondary intermolecular Pb⋅⋅⋅S interactions group the complexes into pairs. As bulk powders, both the ligand and complex show nominal composition and purity as evidenced by elemental analysis, 1 H NMR and IR spectroscopy. Thermal analysis of the lead(II) complex was carried out to understand its thermal decomposition behaviour for establishing a thin film fabrication protocol. Thin films of phase‐pure PbS were fabricated using this new molecular precursor at the comparatively low annealing temperature of 250 °C. The film showed nanoparticles with cuboidal morphology and a blue‐shifted optical absorption.

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Growth of two-dimensional WS2 thin films by reactive sputtering

Cited by 18 publications

References 42 publications

Wafer-sized WS₂ monolayer deposition by sputtering

Wafer-sized WS₂ monolayer deposition by sputtering

NbTe₄ Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide

Thiourea‐Derived Single‐Source Molecular Precursor For Spin‐Coated PbS Thin Films

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Growth of two-dimensional WS2 thin films by reactive sputtering

Cited by 18 publications

References 42 publications

Wafer-sized WS2 monolayer deposition by sputtering

Wafer-sized WS2 monolayer deposition by sputtering

NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide

Thiourea‐Derived Single‐Source Molecular Precursor For Spin‐Coated PbS Thin Films

Contact Info

Product

Resources

About

Wafer-sized WS₂ monolayer deposition by sputtering

Wafer-sized WS₂ monolayer deposition by sputtering

NbTe₄ Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide