Wafer-sized WS<sub>2</sub> monolayer deposition by sputtering

Villamayor, Michelle Marie S.; Husain, Sajid; Oropesa‐Nuñez, Reinier; Johansson, Fredrik; Lindblad, Rebecka; Lourenço, Pedro; Bernard, Romain; Witkowski, Nadine; Prévot, Geoffroy; Sorgenfrei, F.; Giangrisostomi, Erika; Föhlisch, Alexander; Svedlindh, Peter; Lindblad, Andreas; Nyberg, Tomas

doi:10.1039/d1nr08375a

Cited by 7 publications

(11 citation statements)

References 58 publications

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“…Sample S1 shows the W 4f 7/2 and W 4f 5/2 peaks positioned at 32 and 34.18 eV. These peak positions are characteristic of the W 4+ peak in WS 2 . After irradiation, another doublet deconvoluted into two peaks positioned at 35.67 and 37.81 eV (W 6+ 4f 7/2 and W 6+ 4f 5/2 , respectively) starts to appear (Figure b–d).…”

Section: Resultsmentioning

confidence: 95%

“…Sample S1 (Figure 8b) exhibits a single doublet at 162.49 and 163.67 eV, which is correlated to the S 2p 3/2 and S 2p 1/2 states of S 2− , indicating complete sulfurization of the pristine monolayer WS 2 film. 34 After 50 kGy dosage, an additional peak positioned at 168.54 eV starts to appear adjacent to the S 2− peak (Figure 8c−e). This peak corresponds to the presence of sulfate species, SO 4 −2 .…”

Section: Kpfm Analysismentioning

confidence: 96%

“…These peak positions are characteristic of the W 4+ peak in WS 2 . 34 After irradiation, another doublet deconvoluted into two peaks positioned at 35.67 and 37.81 eV (W 6+ 4f 7/2 and W 6+ 4f 5/2 , respectively) starts to appear (Figure 7b−d). These peaks characterize the 6+ oxidation state of the tungsten atom, which can be attributed to formation of the W−O bond.…”

Section: Kpfm Analysismentioning

confidence: 99%

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γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Aggarwal

Bisht

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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This work reports the effect of γ radiation on the surface morphology and surface-charge redistribution in a monolayer WS2 film by comparing the film before and after irradiation (1, 50, 100, 200, and 400 kGy dosage). The surface morphology was monitored through optical microscopy and atomic force microscopy. Raman and photoluminescence spectroscopy were used to study the effect on phonon modes and excitonic properties. The results indicated p-type doping and increased trion-to-exciton transitions. Because of the high energy and lower atomic mass of sulfur atoms, γ irradiation induces sulfur vacancies, which creates dangling bonds at vacant sites. The adsorption of oxygen at these reactive sites results in a charge-transfer mechanism, in which electrons get transferred from the WS2 film to the adsorbed oxygen, which forms oxides and induces p-type doping. An increase in the work function of the film from 4.50 eV for a pristine film to 4.82 eV for an irradiated film (at 200 kGy) was calculated from Kelvin probe force microscopy, which indicates shifting of the Fermi level toward the valence band (VB) maxima. Further, VB spectra deduced from X-ray photoelectron spectroscopy showed a red shift of 0.17 eV after irradiation and confirms p-type doping.

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Section: Resultsmentioning

confidence: 95%

Section: Kpfm Analysismentioning

confidence: 96%

Section: Kpfm Analysismentioning

confidence: 99%

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γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Aggarwal

Bisht

Ghosh

et al. 2023

ACS Appl. Nano Mater.

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“…[ 62 ] Furthermore, direct magnetron sputtering growth of wafer‐sized monolayer WS 2 on Si, SiO 2 , as well as sapphire has been demonstrated to be feasible, which may be a good basis for the construction of WS 2 /h‐BN vdW HSs. [ 63 ] However, similar to the problems faced by MBE, the crystalline quality and stoichiometric ratio of magnetron‐sputter‐grown TMDCs are affected by the amorphous substrate, and the high temperatures generated by the sputtered particles during the growth process can lead to undesirable interfaces. [ 63 ] How to balance the large area of the magnetron sputtered product with high crystalline quality is an issue that needs to be explored.…”

Section: Fabrication Of 2d Vdw Interfaces In All‐2d Electronicsmentioning

confidence: 99%

“…[ 63 ] However, similar to the problems faced by MBE, the crystalline quality and stoichiometric ratio of magnetron‐sputter‐grown TMDCs are affected by the amorphous substrate, and the high temperatures generated by the sputtered particles during the growth process can lead to undesirable interfaces. [ 63 ] How to balance the large area of the magnetron sputtered product with high crystalline quality is an issue that needs to be explored. Tuning of the parameters during sputtering and subsequent annealing of the material may provide improvements in product and interface quality.…”

Section: Fabrication Of 2d Vdw Interfaces In All‐2d Electronicsmentioning

confidence: 99%

Van der Waals‐Interface‐Dominated All‐2D Electronics

Zhang

et al. 2023

Advanced Materials

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The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic devices are facing multiple challenges of material performance decrease and interface quality degradation. Ultrathin 2D materials are considered as potential candidates in future electronics by their atomically flat surfaces and excellent immunity to short‐channel effects. Moreover, due to naturally terminated surfaces and weak van der Waals (vdW) interactions between layers, 2D materials can be freely stacked without the lattice matching limit to form high‐quality heterostructure interfaces with arbitrary components and twist angles. Controlled interlayer band alignment and optimized interfacial carrier behavior allow all‐2D electronics based on 2D vdW interfaces to exhibit more comprehensive functionality and better performance. Especially, achieving the same computing capacity of multiple conventional devices with small footprint all‐2D devices is considered to be the key development direction of future electronics. Herein, the unique properties of all‐2D vdW interfaces and their construction methods are systematically reviewed and the main performance contributions of different vdW interfaces in 2D electronics are summarized, respectively. Finally, the recent progress and challenges for all‐2D vdW electronics are discussed, and how to improve the compatibility of 2D material devices with silicon‐based industrial technology is pointed out as a critical challenge.

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Engineering the Electrical and Optical Properties of WS₂ Monolayers via Defect Control

Bianchi,

Risplendi,

Re Fiorentin

et al. 2023

Advanced Science

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Two‐dimensional (2D) materials as tungsten disulphide (WS2) are rising as the ideal platform for the next generation of nanoscale devices due to the excellent electric‐transport and optical properties. However, the presence of defects in the as grown samples represents one of the main limiting factors for commercial applications. At the same time, WS2 properties are frequently tailored by introducing impurities at specific sites. Aim of this review paper is to present a complete description and discussion of the effects of both intentional and unintentional defects in WS2, by an in depth analysis of the recent experimental and theoretical investigations reported in the literature. First, the most frequent intrinsic defects in WS2 are presented and their effects in the readily synthetized material are discussed. Possible solutions to remove and heal unintentional defects are also analyzed. Following, different doping schemes are reported, including the traditional substitution approach and innovative techniques based on the surface charge transfer with adsorbed atoms or molecules. The plethora of WS2 monolayer modifications presented in this review and the systematic analysis of the corresponding optical and electronic properties, represent strategic degrees of freedom the researchers may exploit to tailor WS2 optical and electronic properties for specific device applications.

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Wafer-sized WS₂ monolayer deposition by sputtering

Abstract: We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of...

Cited by 7 publications

References 58 publications

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Van der Waals‐Interface‐Dominated All‐2D Electronics

Engineering the Electrical and Optical Properties of WS₂ Monolayers via Defect Control

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Wafer-sized WS2 monolayer deposition by sputtering

Abstract: We demonstrate that tungsten disulphide (WS2) with thicknesses ranging from monolayer (ML) to several monolayers can be grown on SiO2/Si, Si, and Al2O3 by pulsed direct current-sputtering. The presence of...

Cited by 7 publications

References 58 publications

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS2

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS2

Van der Waals‐Interface‐Dominated All‐2D Electronics

Engineering the Electrical and Optical Properties of WS2 Monolayers via Defect Control

Contact Info

Product

Resources

About

Wafer-sized WS₂ monolayer deposition by sputtering

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

γ-Ray-Induced Surface-Charge Redistribution and Change of the Surface Morphology in Monolayer WS₂

Engineering the Electrical and Optical Properties of WS₂ Monolayers via Defect Control