Growth of Tube‐Like B‐N Compounds by Chemical Vapor Deposition (CVD)

B-rich nanowires are grown on Ni coated oxidized Si(111) substrate using diborane as the gas precursor in a CVD process at 20 torr and900C∘. These nanowires have diameters around 20–100 nanometers and lengths up to microns. IcosahedronB12is shown to be the basic building unit forming the amorphous B-rich nanowires as characterized by EDAX, XRD, XPS, and Raman spectroscopies. The gas chemistry at low [B2H6]/ [N2] ratio is monitored by the in situ mass spectroscopy, which identifiedN2as an inert carrier gas leading to formation of the B-rich compounds. A nucleation controlled growth mechanism is proposed to explain the rugged nanowire growth of boron. The role of the Ni catalyst in the synthesis of the B-rich nanostructures is also discussed.

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Growth of Boron Nanowires by Chemical Vapor Deposition

Guo

Singh

2007

MRS Proc.

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Motivated by the extensive research on carbon nanotubes (CNTs), boron and its related nano-structures have attracted increasing interests for potential applications in nanodevices and nanotechnologies due to their extraordinary properties. B-related nanostructures are successfully grown on various substrates in a CVD process. The boron nanowires have diameters around 50-200 nanometers and lengths up to a few microns. The gas chemistry is monitored by the in-situ mass-spectroscopy, which helps to identify reactive species in the process. Modified vapor-solid growths as well as VLS growth mechanisms are proposed for the growth of these nanostructures. The role of the catalysts in the synthesis is also discussed.

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Growth of Tube‐Like B‐N Compounds by Chemical Vapor Deposition (CVD)

Cited by 3 publications

References 8 publications

Synthesis of hexagonal boron nitride films on silicon and sapphire substrates by low-pressure chemical vapor deposition

Synthesis of hexagonal boron nitride films on silicon and sapphire substrates by low-pressure chemical vapor deposition

Growth of Boron‐Rich Nanowires by Chemical Vapor Deposition (CVD)

Growth of Boron Nanowires by Chemical Vapor Deposition

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