Growth of Tl doped PbTe single crystals by the travelling heater method

Gille, Peter; Rudolph, P.

doi:10.1016/0022-0248(83)90349-4

Cited by 9 publications

(2 citation statements)

References 4 publications

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“…For instance, completely substructure-free PbTe crystals have been grown at 550 °C (T m = 924 °C) by the Travelling Heater Method (THM) from a Te-rich melt-solution zone [92]. This method has been also successfully tested for numerous further materials, among them GaAs, GaP, InP and CdTe [93].…”

Section: Steps To Prevent Dislocation Patterningmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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Section: Steps To Prevent Dislocation Patterningmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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“…This technique is useful for direct observation of defects and provides valuable feedback for improving structural perfection of the crystals. Many researchers investigated and reported that the perfection of inorganic and organic single crystals has been improved by the presence of dopant [8][9][10][11]. There are very few studies on structural characterization by these techniques on alkali halide single crystals.…”

Section: Introductionmentioning

confidence: 99%