Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Gille, Peter; Mühlberg, M.; Parthier, L.; Rudolph, P.

doi:10.1002/crat.2170190703

Cited by 21 publications

(8 citation statements)

References 29 publications

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“…As was observed in the end region of Bridgman-grown PbTe crystals [27] a nearly plane interface appears at Te-rich composition of the melt but a distinct concave phase boundary was obtained from a Pb-rich melt due to its higher thermal conductivity. As was observed in the end region of Bridgman-grown PbTe crystals [27] a nearly plane interface appears at Te-rich composition of the melt but a distinct concave phase boundary was obtained from a Pb-rich melt due to its higher thermal conductivity.…”

Section: Growth Phenomenasupporting

confidence: 51%

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Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Rudolph

2003

Cryst. Res. Technol.

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136

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An overview on the defect knowledge in IV‐VI (PbTe), II‐VI (CdTe) and III‐V (GaAs, InP) semiconductor compound crystals in dependence on non‐stoichiometric growth conditions from the melt is given. The treatment starts with the today's informations about the phase relations, i.e. the shape of the existence regions versus stoichiometry. Non‐stoichiometry related melt growth phenomena are specified. After that selected intrinsic point defects and their influence on the impurity incorporation as function of deviation from stoichiometry are discussed. The interaction processes between native point defects and dislocation formation is touched. Finally, the serious mechanisms of precipitation and inclusion incorporation are shown. Possible measures of defect minimization are mentioned.

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Section: Growth Phenomenasupporting

confidence: 51%

“…Typical cell arrangements have been ascertained in PbTe [27], CdTe [6] and GaAs [53,54]. Therefore, three-dimensional dislocation arrangements indicate the participation of intrinsic point defects in its formation mechanisms.…”

Section: Dislocationsmentioning

confidence: 94%

Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Rudolph

2003

Cryst. Res. Technol.

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136

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“…However, the advantage of seeding in the traveling solvent technique has been reported for the crystal growth of various materials. For instance, the reproducible growth of oriented PbTe crystals, free of low angle grain boundaries, is reported using a single crystal seed [33], while crystal growth improvement of CuGaSe 2 using the seeding technique is also reported [34].…”

Section: Seed Crystalmentioning

confidence: 99%

Single crystal growth by the traveling solvent technique: A review

Koohpayeh

2016

Progress in Crystal Growth and Characterization of Materials

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A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables is imperative; however, this can be difficult to achieve due to the large number of independent experimental parameters that can be grouped under the broad headings 'growth conditions', 'characteristics of the material being grown', and 'experimental configuration, setup and design'. This review attempts to describe the principles behind the traveling solvent technique and the various experimental variables.Guidelines are detailed to provide the information necessary to allow closer control of the crystal growth process through a systematic approach. Comparison is made between the traveling solvent technique and other crystal growth methods, in particular the more conventional stationary flux method. The use of optical heating is described in detail and successful traveling solvent growth by optical heating is reported for the first time for crystals of Tl 5 Te 3 , Cd 3 As 2 , and FeSc 2 S 4 (using Te, Cd and FeS fluxes, respectively).

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“…The estimation of the number of Te atoms absorbed by the precipitates corresponds to the maximum deviation from stoichiometry, and supports the idea of diffusion-determined precipitation due to the retrograde course of the solidus line, which causes a supersaturation of the excess component and results in precipitates within the crystals being cooled after growth [ 12 ]. A general method and the details of the single-crystal growth are described in References [ 13 , 14 ], see also the Materials and Methods section.…”

Section: Introductionmentioning

confidence: 99%

In Situ Observation of Electron-Beam-Induced Formation of Nano-Structures in PbTe

et al. 2021

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Nano-scaled thermoelectric materials attract significant interest due to their improved physical properties as compared to bulk materials. Well-shaped nanoparticles such as nano-bars and nano-cubes were observed in the known thermoelectric material PbTe. Their extended two-dimensional nano-layer arrangements form directly in situ through electron-beam treatment in the transmission electron microscope. The experiments show the atomistic depletion mechanism of the initial crystal and the recrystallization of PbTe nanoparticles out of the microparticles due to the local atomic-scale transport via the gas phase beyond a threshold current density of the beam.

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Crystal growth of PbTe and (Pb, Sn)Te by the bridgman method and by THM

Abstract: 1-2 x 101s CM-3.

Cited by 21 publications

References 29 publications

Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Non‐stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

Single crystal growth by the traveling solvent technique: A review

In Situ Observation of Electron-Beam-Induced Formation of Nano-Structures in PbTe

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