2016
DOI: 10.1016/j.pcrysgrow.2016.03.001
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Single crystal growth by the traveling solvent technique: A review

Abstract: A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables … Show more

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Cited by 34 publications
(24 citation statements)
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“…We attempted the traveling-solvent floating zone method. A solvent pellet of 70:30 mol% SiO 2 :Yb 2 O 3 was used in the TSFZ type of crystal growth [16] as an attempt to lower the melting point (following the liquidus curve in Figure 1 to lower mol% SiO 2 ) so as to potentially reduce the cracking problem that lead to multi-crystals in the previous attempt. The growth atmosphere was O 2 at a static pressure of 1 atm.…”
Section: Crystal Growth Using Optical Floating Zone Methodsmentioning
confidence: 99%
“…We attempted the traveling-solvent floating zone method. A solvent pellet of 70:30 mol% SiO 2 :Yb 2 O 3 was used in the TSFZ type of crystal growth [16] as an attempt to lower the melting point (following the liquidus curve in Figure 1 to lower mol% SiO 2 ) so as to potentially reduce the cracking problem that lead to multi-crystals in the previous attempt. The growth atmosphere was O 2 at a static pressure of 1 atm.…”
Section: Crystal Growth Using Optical Floating Zone Methodsmentioning
confidence: 99%
“…Sample D (∼10 mm×5 mm) was prepared using a traveling solvent technique, as detailed in Ref. 16. For samples A and B, their natural (112) surfaces were investigated.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The steady lamp power during the growth therefore indicates an unchanging stoichiometry of the molten zone: the material leaving the molten zone (the grown crystal) is identical in composition to the material entering the molten zone (the stoichiometric feed rod). 40, 41 The quality and purity of this crystal were analyzed by Rietveld refinement to the XRD data. The lattice parameter does not change appreciably over the 40 mm length of the grown crystal: a =10.03066(6)Å at the start and 10.03104(2)Å at the end.…”
Section: B Single Crystalmentioning
confidence: 99%