2014
DOI: 10.1016/j.apsusc.2014.01.102
|View full text |Cite
|
Sign up to set email alerts
|

Growth of thin zirconium and zirconium oxides films on the n-GaN(0001) surface studied by XPS and LEED

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

1
0
0

Year Published

2015
2015
2023
2023

Publication Types

Select...
5

Relationship

0
5

Authors

Journals

citations
Cited by 9 publications
(1 citation statement)
references
References 25 publications
1
0
0
Order By: Relevance
“…This data corroborated that the oxide films have the elemental composition corresponding to the stoichiometry of the most stable oxides of Ti and Zr, i.e. TiO 2 and ZrO 2 , respectively [39,40,43,44]. No presence of substoichiometric oxides was observed; Ti or Zr was present in the films only as oxidized species in their maximum valence state, Ti 4+ at ≈458.8 eV and Zr 4+ at ≈184.6 eV, respectively.…”
Section: Chemical Compositionsupporting
confidence: 86%
“…This data corroborated that the oxide films have the elemental composition corresponding to the stoichiometry of the most stable oxides of Ti and Zr, i.e. TiO 2 and ZrO 2 , respectively [39,40,43,44]. No presence of substoichiometric oxides was observed; Ti or Zr was present in the films only as oxidized species in their maximum valence state, Ti 4+ at ≈458.8 eV and Zr 4+ at ≈184.6 eV, respectively.…”
Section: Chemical Compositionsupporting
confidence: 86%