An investigation of thin Zr films on 6H-SiC(0001) and GaN(0001) surfaces by XPS, LEED, and STM

Idczak, K.; Mazur, Piotr; Zuber, S.; Markowski, L.

doi:10.1007/s00339-016-9801-8

Cited by 4 publications

(1 citation statement)

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“…The components (N III ) on the low‐binding‐energy side of the N1s spectrum at 396.69 ± 0.07 eV are attributed to GaN‐like nitrogen (Idczak, Mazur, Zuber, & Markowski, ; Lin, Chen, Cheng, & Ker, ; Matolín et al, ; Pansila et al, ). The high‐binding‐energy components (N I ) at 398.23 ± 0.04 eV reportedly correspond to the presence of loosely bound nitrogen on the sample's surface, where nitrogen belongs to a specific species of adsorbed N‐H (Lin et al, ; Matolín et al, ; Pansila et al, ) or N‐O (Idczak et al, ) bond. The intermediate‐binding‐energy components (N II ) at 397.47 ± 0.02 eV are associated with nitrogen‐deficient regions in the GaN matrix.…”

Section: Resultsmentioning

confidence: 99%

Differences in the nanoscale electrical properties of GaN films grown on sapphire and ZnO substrates by molecular beam epitaxy

Chen

Chang

et al. 2017

Microscopy Res & Technique

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Gallium nitride (GaN) films were grown on sapphire and zinc oxide (ZnO) single crystal substrates using plasma-assisted molecular beam epitaxy. As ZnO for GaN have a better lattice match, the coverage ratio of the GaN (002) plane on the ZnO substrate was significantly higher by about 45%. According to conducting atomic force microscopy and scanning surface potential microscopy measurements, the surface of GaN films grown on the ZnO substrate had two excellent physical characteristics: (a) an 18% reduction of the high contact current region, and (b) a highly uniform work function distribution. Therefore, for future applications in GaN-based light-emitting diodes, the use of ZnO as a substrate will prolong the luminescence lifetime and enhance the luminescent monochromaticity.

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