Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

Yamane, T.; Satoh, Fumitaka; Murakami, Hisashi; Kumagai, Yoshinao; Koukitu, Akinori

doi:10.1016/j.jcrysgro.2006.11.009

Cited by 14 publications

(14 citation statements)

References 15 publications

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“…Some research groups have succeeded in growing an AlN or AlGaN substrate to enable homoepitaxial-like growth of Al-rich AlGaN [1][2][3][4][5]. An Al(Ga)N template was successfully grown on a sapphire substrate by HVPE using AlCl 3 as the Al source [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

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Possibility of AlN growth using Li–Al–N solvent

Kangawa

Kakimoto

2010

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

“…An Al(Ga)N template was successfully grown on a sapphire substrate by HVPE using AlCl 3 as the Al source [1][2][3][4]. Mueller et al [6] grew AlN crystal boules by a sublimation method.…”

Section: Introductionmentioning

confidence: 99%

Possibility of AlN growth using Li–Al–N solvent

Kangawa

Kakimoto

2010

Journal of Crystal Growth

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“…Some groups are engaged in the fabrication of AlN substrates or AlGaN substrates to enable homoepitaxial growth of AlN [4][5][6][7][8]. Koukitu's group [4][5][6] successfully grew thick AlN and/or AlGaN layers on a sapphire substrate by HVPE using AlCl 3 as the Al source. On the other hand, Kamei et al [8] reported the achievement of AlN growth with low dislocation density by liquid phase epitaxy (LPE).…”

Section: Introductionmentioning

confidence: 99%

Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy

Wakigawa

Nagano

Kangawa

et al. 2008

Journal of Crystal Growth

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“…However, high temperatures more than 2000 °C are needed to grow AlN by this method. Koukitu's group [4][5][6] grew thick AlN and/or AlGaN layers on a sapphire substrate by hydride vapor phase epitaxy (HVPE) using AlCl 3 as an Al source. Growing temperature of AlN using HVPE is lower than that in case of sublimation method.…”

mentioning

confidence: 99%

Influence of compositional changes of source materials on AlN synthesis using Li‐Al‐N solvent

Nagano¹,

Kangawa²,

Kakimoto³

2009

Phys. Status Solidi (c)

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We carried out AlN synthesis using Li‐Al‐N solvent. In the present work, Al and Li3N were used as source materials. In this paper, we discuss the variation in phase stability of the products with change in Li‐Al‐N composition, i.e., Al/Li3N molar ratio. The results suggest that LiAlO2 extra phase was formed in the products under an Al‐rich synthesis condition. The oxide formation seems to be caused by oxidation of the nitrogen source. That is, some of the Li3N reacted with H2O in the ambient and to be LiOH, though preparation of the source materials was performed in a glove‐box. On the other hand, scanning electron microscopy (SEM) images indicate the possibility of reducing nucleation sites and increasing grain size by optimizing the Al/Li3N molar ratio. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Growth of thick Al Ga1−N ternary alloy by hydride vapor-phase epitaxy

Cited by 14 publications

References 15 publications

Possibility of AlN growth using Li–Al–N solvent

Possibility of AlN growth using Li–Al–N solvent

Synthesis of AlN from Li3N and Al: Application to vapor phase epitaxy

Influence of compositional changes of source materials on AlN synthesis using Li‐Al‐N solvent

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