Growth of SiC polytypes by the physical vapour transport technique

Abstract

A brief survey of the development of the sublimation growth of SiC is given. The growth equipment and especially the hot zone of the furnace for the physical vapour transport (PVT) technique are described in detail. In order to grow micropipe-free SiC crystals, near-thermal-equilibrium growth is developed and the individual processing steps are revealed. The essential parameters for the growth of 4H-, 6H-, 15R-and 3C-SiC single crystals are discussed and a survey of the incorporation of donors (N, P) and acceptors (Al, B) during the PVT growth is presented.

Silicon Carbide: Synthesis and Properties

“…Physical vapor transport (PVT), also known as the seeded sublimation growth, has been the most popular and successful method to grow large sized SiC single crystals (Augustin et al, 2000;Semmelroth et al 2004). The first method of sublimation technique, known as the Lely method (Lely, Keram, 1955) was carried out in argon ambient at about 2500°C in a graphite container, leading to a limited SiC crystal size.…”

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

“…For SiC crystals grown by the modified Lely technique, 1 the polytype occurrence and stability depend on the growth conditions and orientation of the substrate, [2][3][4][5][6] as well as on the probability of formation of singular faces during growth. 7 Even though the conditions for stable growth of a single polytype were developed, [2][3][4][5][6]8 uncontrolled formation of inclusions of other polytypes might occur. At the boundaries of foreign polytype inclusions, lattice defects are generated and lattice tilts are produced.…”

Raman scattering properties of structural defects in SiC

“…And the interest in fabricating high quality SiC devices is now growing. However, some structural defects [3][4][5][6][7] such as dislocations, stacking faults, misoriented grains and low-angle grain boundaries still remain to be a problem. Especially, it is generally considered that threading defects will deteriorate electrical characteristics of SiC power devices such as the breakdown voltage.…”