2007
DOI: 10.1103/physrevb.76.064117
|View full text |Cite
|
Sign up to set email alerts
|

Role of micropipes in the formation of pores at foreign polytype boundaries in SiC crystals

Abstract: The role of micropipes in pore formation in SiC crystals with foreign polytype inclusions is studied by means of synchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence. The pores at the inclusion boundaries are revealed, and their shapes and locations are analyzed. It is found that the pores arise due to the attraction of micropipes by the foreign polytype interfaces, followed by micropipe coalescence. The observed pores have tubular or slit shapes. Tub… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

1
15
0

Year Published

2009
2009
2022
2022

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 12 publications
(16 citation statements)
references
References 28 publications
1
15
0
Order By: Relevance
“…3(a) demonstrates that the groups of pores (marked by black and white arrows) consist of short tube-shaped or slit-like segments. The morphology of such pores was investigated and attributed to the elastic interaction between MPs and boundaries of FPIs, resulting in coalescence of MPs into larger pores elongated along the boundaries [11,13]. FPIs were indeed observed on the same location, as revealed by the yellow PL images [28] of n-type 4H-SiC containing N and B in Fig.…”
Section: The Evolution Of Defects During Sic Growthmentioning
confidence: 88%
See 4 more Smart Citations
“…3(a) demonstrates that the groups of pores (marked by black and white arrows) consist of short tube-shaped or slit-like segments. The morphology of such pores was investigated and attributed to the elastic interaction between MPs and boundaries of FPIs, resulting in coalescence of MPs into larger pores elongated along the boundaries [11,13]. FPIs were indeed observed on the same location, as revealed by the yellow PL images [28] of n-type 4H-SiC containing N and B in Fig.…”
Section: The Evolution Of Defects During Sic Growthmentioning
confidence: 88%
“…The attraction of the MPs to the pore was suggested and explained by their absorption to pores [11,13]. We believe that, at the initial stage of growth, the pores are generated by the attraction of MPs by FPIs, followed by MP coalescence [10,11].…”
Section: The Evolution Of Defects During Sic Growthmentioning
confidence: 99%
See 3 more Smart Citations