2014
DOI: 10.1021/nl403515c
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Growth of Semiconducting Single-Walled Carbon Nanotubes by Using Ceria as Catalyst Supports

Abstract: The growth of semiconducting single-walled carbon nanotubes (s-SWNTs) on flat substrates is essential for the application of SWNTs in electronic and optoelectronic devices. We developed a flexible strategy to selectively grow s-SWNTs on silicon substrates using a ceria-supported iron or cobalt catalysts. Ceria, which stores active oxygen, plays a crucial role in the selective growth process by inhibiting the formation of metallic SWNTs via oxidation. The so-produced ultralong s-SWNT arrays are immediately read… Show more

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Cited by 86 publications
(86 citation statements)
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“…In the absence of a routine synthesis technique able to provide single-chirality SWCNT samples, various ways aiming at controlling the electronic properties of carbon * corresponding author : salome.forel@polytechnique.edu; alice.castan@onera.fr; hakim.amara@onera.fr nanotubes have been investigated [20], especially to favor the growth of semiconducting SWCNTs (s-SWCNTs) highly desired for applications in microelectronics. Two main routes are used: the selective etching of the metallic SWCNTs (m-SWCNTs) during the growth process [21][22][23][24][25][26], or the burning of m-SWCNTs after integration into a device [27]. Nevertheless, obtaining s-SWCNT-enriched samples is not sufficient for designing efficient devices: a fine-tuning of the diameter of the SWCNTs, which is inversely proportional to the gap, can greatly contribute to improving device performance [26].…”
Section: Introductionmentioning
confidence: 99%
“…In the absence of a routine synthesis technique able to provide single-chirality SWCNT samples, various ways aiming at controlling the electronic properties of carbon * corresponding author : salome.forel@polytechnique.edu; alice.castan@onera.fr; hakim.amara@onera.fr nanotubes have been investigated [20], especially to favor the growth of semiconducting SWCNTs (s-SWCNTs) highly desired for applications in microelectronics. Two main routes are used: the selective etching of the metallic SWCNTs (m-SWCNTs) during the growth process [21][22][23][24][25][26], or the burning of m-SWCNTs after integration into a device [27]. Nevertheless, obtaining s-SWCNT-enriched samples is not sufficient for designing efficient devices: a fine-tuning of the diameter of the SWCNTs, which is inversely proportional to the gap, can greatly contribute to improving device performance [26].…”
Section: Introductionmentioning
confidence: 99%
“…Growth of pure (100%) m-SWNTs or s-SWNTs is still being pursued. Recent works [8], [9], [10], [11], [12], [13], [14], [15], [16] reported SWNT enrichments based on electronic type [8], [9], [10], [11], [12] and specific chiralities [15], [16]. However, achieving ondemand control of SWNTs type is still far from being solved.…”
Section: Introductionmentioning
confidence: 99%
“…[3][4][5][6][7] Recent progress in growth, purification, and placement of carbon nanotubes demonstrates that the main hurdles for using carbon nanotubes in semiconductor applications are surpassable. [8][9][10][11][12] However, many challenges for reliable fabrication of CNTFETs still remain.…”
mentioning
confidence: 99%